Article
Engineering, Electrical & Electronic
Injun Hwang, Soogine Chong, Dong-Chul Shin, Sun-Kyu Hwang, Younghwan Park, Boram Kim, Joonyong Kim, Jaejoon Oh, Jun Hyuk Park, Min Chul Yu, Woochul Jeon, Jai Kwang Shin, Jongseob Kim
Summary: The research suggests using wafer level transient voltage measurement (WLTVM) to estimate the short circuit capability of AlGaN/GaNHEMT devices. The study found that short circuit failure is mainly attributed to degradation in the drift region. By measuring transient potential changes, it is possible to predict short circuit failures and take timely action.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Xin Chao, Chengkang Tang, Jingjing Tan, Chen Wang, QingQing Sun, David Wei Zhang
Summary: Multiple time-dependent gate breakdown experiments were performed on p-GaN gate high-electron-mobility transistors under constant gate voltage stress. The time-to-BD was found to have a positive dependence on temperature but a weak relevance to p-GaN gate length. The failure mechanisms were revealed by analyzing the degradation behaviors and the carrier transport mechanisms before/after the degradation of the Schottky junction.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Shuang Liu, Weihang Zhang, Jincheng Zhang, Xiufeng Song, Yinhe Wu, Dazheng Chen, Shengrui Xu, Shenglei Zhao, Yue Hao
Summary: A high-electron-mobility transistor (HEMT) with AlN/GaN superlattice (SL) channel has been successfully demonstrated on a silicon substrate, achieving high performance with optimized breakdown voltage and output current. The trap states in the AlN/GaN SL channel were investigated, revealing a reduction in trap state density in the parasitic channel and specific energy levels in the main channel. This study represents a significant advancement in the development of SL channel HEMTs on cost-effective silicon substrates and provides a novel technology for high output current in AlGaN multichannel devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Analytical
Meng Zhang, Yilin Chen, Siyin Guo, Hao Lu, Qing Zhu, Minhan Mi, Mei Wu, Bin Hou, Ling Yang, Xiaohua Ma, Yue Hao
Summary: AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were studied. The top gate control in TGN-devices resulted in larger transconductance peak, current gain cut-off frequency, and power gain cut-off frequency compared to the DGN-devices. Decreasing the nanochannel width increased the transconductance peak and derivatives, indicating the significant influence of sidewall gate capacitance on the transconductance and linearity. The gate capacitance of the tri-gate structure was not a linear combination of the top planar gate capacitance and sidewall gate capacitance of the dual-gate structure due to the difference in depletion region shape.
Article
Physics, Applied
Ajay Shanbhag, Ramdas P. Khade, Sujan Sarkar, M. P. Sruthi, Deleep Nair, Anjan Chakravorty, Nandita DasGupta, Amitava DasGupta
Summary: An accurate method for extracting the thermal resistance of GaN-on-Si HEMTs is proposed in this paper. By pulsing the substrate instead of the drain or gate, the impact of traps on the extraction process is reduced. Experimental results show the effectiveness of the proposed method compared to the existing drain pulsing method.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Gaudencio Paz-Martinez, Ignacio Iniguez-de-la-Torre, Philippe Artillan, Hector Sanchez-Martin, Sergio Garcia-Sanchez, Tomas Gonzalez, Javier Mateos
Summary: The behavior of GaN-based HEMTs as microwave zero-bias detectors is influenced by the bias configuration, operation temperature, and RF power input method. The negative current responsivity shows a bell-shape dependence on the gate-to-source voltage (V-GS) when the signal is injected into the drain. In subthreshold conditions, the voltage responsivity may increase or decrease depending on the temperature range. For the gate-injection configuration, the voltage responsivity is null at low frequencies and above threshold, but surprisingly, it is high and positive in subthreshold conditions. This unexpected behavior is due to self-biasing of the drain terminal at the zero-current operating point.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
(2023)
Article
Engineering, Electrical & Electronic
Mohamed Aniss Mebarki, Ragnar Ferrand-Drake Del Castillo, Denis Meledin, Erik Sundin, Mattias Thorsell, Niklas Rorsman, Victor Belitsky, Vincent Desmaris
Summary: This study reports on the noise characterization and modeling of AlGaN/GaN HEMTs at a cryogenic temperature. The proposed model, based on measured noise figures and scattering parameters, provides the frequency and bias dependence of the cryogenic noise properties of AlGaN/GaN HEMTs, and separates the noise contributions from different sources. This model lays the foundation for the future design and implementation of GaN-based cryogenic low-noise amplifiers.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
(2022)
Article
Engineering, Electrical & Electronic
Injun Hwang, Soogine Chong, Younghwan Park, Sun-Kyu Hwang, Boram Kim, Joonyong Kim, Jaejoon Oh, Jun Hyuk Park, Dong-Chul Shin, Min Chul Yu, Jai Kwang Shin, Jongseob Kim
Summary: This study focuses on the transient measurement of the drift region potential in AlGaN/GaN HEMT under high power state, revealing that the propagation speed of high electric field in the device is influenced by the drift region voltage, and proposing that trapping of hot channel electrons is causing this effect.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Jielong Liu, Minhan Mi, Jiejie Zhu, Siyu Liu, Pengfei Wang, Yuwei Zhou, Qing Zhu, Mei Wu, Hao Lu, Bin Hou, Hong Wang, Xiaolong Cai, Yu Zhang, Xiangyang Duan, Ling Yang, Xiaohua Ma, Yue Hao
Summary: This study investigated AlGaN/GaN HEMTs with Si-rich SiN/Si3N4 bilayer passivation, finding that the use of a Si-rich SiN interlayer can enhance channel transport property, current collapse, power performance, and temperature stability. Devices without this interlayer exhibit increased gate leakage current and current collapse with temperature, while those with Si-rich SiN passivation show weak temperature dependence and consistent current collapse. The improved power performance of devices with Si-rich SiN interlayer passivation is attributed to suppressed current collapse and superior device stability at high channel temperatures.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Hao Lu, Bin Hou, Ling Yang, Meng Zhang, Longge Deng, Mei Wu, Zeyan Si, Sen Huang, Xiaohua Ma, Yue Hao
Summary: This work presents recent advancements in the sub-6 GHz power performance of GaN-based HEMTs grown on high resistivity silicon substrates using the passivation implanted termination (PIT) process. The fabricated HEMTs exhibit a low leakage current, a high ON/OFF current ratio, and improved breakdown voltage. They also demonstrate a high power-added efficiency (PAE), drain efficiency (DE), and output power density (P-out). The findings suggest that the PIT process could be a promising technique to enhance the application of high-performance GaN-on-Si HEMTs in 5G wireless base stations.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Jie Li, Min Tang, Junfa Mao
Summary: An analytical thermal model is proposed in this article, which accurately predicts the temperature rise of AlGaN/GaN high-electron-mobility transistors (HEMTs) and estimates the thermal coupling between gate fingers in multifinger devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Ruizhe Zhang, Qihao Song, Qiang Li, Yuhao Zhang
Summary: This article investigates the ruggedness of GaN high electron mobility transistors (HEMTs) in continuous, high-frequency, overvoltage switching. Four commercial p-gate GaN HEMTs from multiple vendors were tested, revealing new failure mechanisms at high frequency and decreased breakdown voltage (BVDYN) due to carrier trapping. The article also provides a simple method to identify intrinsic BVDYN and filter out devices with extrinsic failure mechanisms.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Chi Zhang, Sheng Li, Weihao Lu, Siyang Liu, Yanfeng Ma, Jingwen Huang, Jiaxing Wei, Long Zhang, Weifeng Sun
Summary: This study reveals the unclamped-inductive-switching (UIS) behaviors of GaN-based high-electron-mobility transistors with p-type GaN gate (p-GaN HEMTs) at cryogenic temperature (CT). It is found that the UIS performance of p-GaN HEMTs is not affected by temperature, and the resonant circuit and inverse-piezoelectric effect are identified as key factors in the UIS process. These findings indicate the superiority of p-GaN HEMTs for special applications.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Physics, Applied
Lian Zhang, Zhe Cheng, Yawei He, Jianxing Xu, Lifang Jia, Xinyuan Wang, Shiyong Zhang, Wei Tan, Yun Zhang
Summary: This study focuses on the electron concentration and mobility of SAG n(+)-GaN on InAlN/GaN HEMTs using MOCVD, revealing that the electron mobility of SAG GaN is significantly affected by thickness. A gas flow model is proposed to guide the regrowth for improving electron mobility. High mobility and low resistance are achieved in the SAG GaN, contributing to the performance of the HEMTs.
APPLIED PHYSICS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Gao Zhan, Fabiana Rampazzo, Carlo De Santi, Mirko Fornasier, Gaudenzio Meneghesso, Matteo Meneghini, Herve Blanck, Jan Gruenenpuett, Daniel Sommer, Ding Yuan Chen, Kai-Hsin Wen, Jr-Tai Chen, Enrico Zanoni
Summary: DC characteristics of AlGaN/GaN HEMTs with different thickness values of the undoped GaN channel layer were compared. An abnormal transconductance (gm) overshoot accompanied by a negative threshold voltage (V-TH) shift was observed during IDS-V-GS sweep in devices with thinner GaN layer. At the same time, a non-monotonic increase in gate current was observed. In OFF-state, electron trapping occurs in the undoped GaN layer or at the GaN/AlN interface, leading to a positive VTH shift. When the device is turning on at a sufficiently high V-DS, electron de-trapping occurs due to trap impact-ionization; consequently, V-TH and therefore ID suddenly recovers, leading to the gm overshoot effect. These effects are attributed to electron trap impact-ionization and consequent modulation of the device's electric field.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Editorial Material
Engineering, Electrical & Electronic
Jesus A. Del Alamo
IEEE ELECTRON DEVICE LETTERS
(2020)
Article
Engineering, Electrical & Electronic
Xiaowei Cai, Alon Vardi, Jesus Grajal, Jesus A. del Alamo
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Multidisciplinary Sciences
Xiahui Yao, Konstantin Klyukin, Wenjie Lu, Murat Onen, Seungchan Ryu, Dongha Kim, Nicolas Emond, Iradwikanari Waluyo, Adrian Hunt, Jesus A. del Alamo, Ju Li, Bilge Yildiz
NATURE COMMUNICATIONS
(2020)
Article
Engineering, Electrical & Electronic
Alon Vardi, Moshe Tordjman, Rafi Kalish, Jesus A. del Alamo
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Editorial Material
Engineering, Electrical & Electronic
Jesus A. Del Alamo
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Yanjie Shao, Marco Pala, David Esseni, Jesus A. del Alamo
Summary: This study investigates the diameter scaling behavior of broken-band GaSb/InAs vertical nanowire Esaki diodes, and finds a great potential for ultra-low power applications. The research includes fabrication and characterization of devices, as well as modeling and simulations.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Dongsung Choi, Alon Vardi, Jesus A. del Alamo
Summary: A novel test structure for studying sidewall ohmic contacts to III-V fins for FinFETs was presented. The impact of digital etch and thermal annealing on the contact resistivity of Mo/n(+)-InGaAs fin sidewall contacts was characterized. Thermal annealing was found to significantly improve the sidewall contact resistivity, demonstrating the importance of understanding sidewall ohmic contact formation for future high-performance InGaAs FinFETs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Dimitri Antoniadis, Taekyong Kim, Jesus A. del Alamo
Summary: The nucleation-limited switching (NLS) model has been successful in explaining the dynamics of polarization switching in polycrystalline ferroelectric films in various experiments, but its mathematical complexity has hindered its implementation in realistic circuit simulations with complex driving waveforms. By reformulating NLS as a generalized polarization rate equation, researchers have been able to capture nucleation incubation time and intra- and inter-grain switching statistics accurately, paving the way for efficient numerical finite-difference computation and verification in circuit simulations.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Physics, Applied
Ethan S. Lee, Jungwoo Joh, Dong Seup Lee, Jesus A. del Alamo
Summary: In this study, the impact of gate geometry on forward operation of Schottky-gate p-GaN high electron mobility transistors (HEMTs) was experimentally investigated. The results showed that gate geometry affected the threshold voltage and subthreshold swing scaling, but had a classical scaling effect on peak transconductance and ON resistance. Additionally, the relative areas of two junctions in Schottky-type p-GaN gate HEMTs were found to be an additional design degree of freedom to fine-tune device performance.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Yanjie Shao, Jesus A. del Alamo
Summary: In this letter, we present the achievement of sub-10-nm diameter vertical nanowire p-type tunnel FETs. By utilizing a broken-band GaSb/InAsSb heterostructure design and a top-down fabrication approach, we successfully demonstrate a 9-nm diameter VNW TFET with excellent performance, indicating the potential viability of GaSb-based complementary TFETs in future ultra-scaled logic technologies.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Alon Vardi, Moshe Tordjman, Rafi Kalish, Jesus A. del Alamo
Summary: The impact of WO3 passivation on the electrical characteristics of hydrogen-terminated diamond MOSFETs with WC edge contacts is studied. WO3 is found to significantly improve both contact and extrinsic channel sheet resistance, enabling fast device turn-off.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Taekyong Kim, Jesus A. del Alamo, Dimitri A. Antoniadis
Summary: The existence of negative capacitance (NC) and the switching dynamics of ferroelectric HfZrO2 (FE-HZO) metal-ferroelectric-Metal (MFM) structures are still contentious and unclear. This work provides a detailed study of the switching characteristics of HZO MFM structures and demonstrates that there is no evidence of NC effect. The study emphasizes the crucial role of parasitics in the dynamic characterization of R-MFM circuits.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Multidisciplinary Sciences
Murat Onen, Nicolas Emond, Baoming Wang, Difei Zhang, Frances M. Ross, Ju Li, Bilge Yildiz, Jesus A. del Alamo
Summary: In this study, highly desirable silicon-compatible nanoscale protonic programmable resistors were developed, enabling efficient and fast proton shuttling and intercalation at room temperature under extreme electric fields. The devices exhibited symmetric, linear, and reversible modulation characteristics, surpassing the space-time-energy performance of biological synapses.
Biographical-Item
Engineering, Electrical & Electronic
Jesus A. del Alamo
Summary: The article welcomes Prof. Elaheh Ahmadi to the Editorial Board of IEEE Electron Device Letters, with her subject area being Compound Semiconductor Devices.
IEEE ELECTRON DEVICE LETTERS
(2022)
Editorial Material
Engineering, Electrical & Electronic
Jesus A. del Alamo
Summary: Prof. Min Hyuk Park has joined the Editorial Board of IEEE Electron Device Letters and his research areas include Emerging Technologies and Devices and Memory Devices and Technology.
IEEE ELECTRON DEVICE LETTERS
(2022)
