Article
Engineering, Electrical & Electronic
Arghyadeep Sarkar, Yaser M. Haddara
Summary: We have developed a numerical model for predicting and analyzing gate leakage current in normally off pGaN/AlGaN/GaN high electron mobility transistors. The model has been validated against experimental data from multiple research groups and proven to be accurate and reliable.
SOLID-STATE ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Xiaoyu Ding, Liang Song, Guohao Yu, Yong Cai, Yuhua Sun, Bingliang Zhang, Zhongkai Du, Zhongming Zeng, Xinping Zhang, Baoshun Zhang
Summary: The study investigates the AlGaN/GaN high-electron-mobility transistor (HEMT) passivated by fluorinated graphene (FG). The gate leakage current significantly decreases after F plasma treatment and passivation with FG and FG/SiNx. The improvement in gate leakages is mainly attributed to the enhancement of Schottky barrier heights and augmentation of activation energy.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)
Article
Physics, Multidisciplinary
Mehrnegar Aghayan, Pouya Valizadeh
Summary: This study investigates the reverse gate-leakage current of AlGaN/GaN heterojunction field-effect transistors (HFETs) realized on array of submicron sized fins and conventional mesa isolation feature geometries at room temperature and zero drain-source bias. The significance of leakage from the top surface gate as well as gated etched GaN surfaces, especially sidewalls, is studied for a wide range of gate-source voltages (V-GS). It is found that leakage through the gated GaN surfaces, particularly the sidewalls, is more significant than the leakage from the top surface gate in the explored fin-type HFETs, while the sidewall leakage is of importance only at less negative values of V-GS in the mesa category. The dominance of leakage paths at different V-GS values is attributed to the stronger electric field across the barrier in the gated region of the mesa-type HFET.
Article
Computer Science, Information Systems
Sushanta Bordoloi, Ashok Ray, Gaurav Trivedi
Summary: This paper presents a detailed analysis of gate-shaped AlGaN / GaN HEMT with field plate, showing that the threshold voltage and transconductance remain constant for various combinations of gate-shaped and field plate placements. The use of field plate significantly reduces leakage current, electric field, and electron temperature, leading to an enhancement in device reliability. The proposed structure is expected to be a step ahead of conventional devices and have major applications in the high power domain.
Article
Physics, Multidisciplinary
Xin Jiang, Chen-Hao Li, Shuo-Xiong Yang, Jia-Hao Liang, Long-Kun Lai, Qing-Yang Dong, Wei Huang, Xin-Yu Liu, Wei-Jun Luo
Summary: The reverse gate leakage mechanism of W-gate and TiN-gate AlGaN/GaN HEMTs with N-2 plasma surface treatment was investigated through current-voltage (I-V) and capacitance-voltage (C-V) characteristics and theoretical calculation analysis. It was found that the main reverse gate leakage mechanism of both devices is the trap-assisted tunneling (TAT) mechanism in the entire reverse bias region (-30 V to 0 V). Additionally, it was observed that the reverse gate leakage current of the W-gate AlGaN/GaN HEMTs is smaller than that of the TiN gate at high reverse gate bias voltage. Moreover, the activation energies of the extracted W-gate and TiN-gate AlGaN/GaN HEMTs are 0.0551 eV-0.127 eV and 0.112 eV-0.201 eV, respectively.
Article
Engineering, Electrical & Electronic
Mengyuan Hua, Chengcai Wang, Junting Chen, Junlei Zhao, Song Yang, Li Zhang, Zheyang Zheng, Jin Wei, Kevin J. Chen
Summary: In this study, the gate leakage mechanisms of E-mode p-n junction/AlGaN/GaN HEMTs were investigated. It was found that the intrinsic gate leakage is limited by the transport of holes through the p-GaN layer, and lateral leakage current as well as the role of variable hopping process (VRH) were also discussed. Gate leakage current models based on these mechanisms were able to quantitatively replicate the gate-leakage behavior across the entire relevant range of gate biases and temperatures.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Chia-Hao Liu, Hsien-Chin Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Chong-Rong Huang
Summary: The study shows that DJ-HEMT exhibits higher gate voltage swing in the gate region due to the dual junction, enhancing gate performance. Compared to ST-HEMT, DJ-HEMT has higher V-TH, saturation current, I-ON/I-OFF ratio, and gate swing voltage. In addition, DJ-HEMT also has lower leakage current and longer lifetime measurement.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Physics, Applied
Xingjie Huang, Yanhui Xing, Guohao Yu, Wenxin Tang, Xing Wei, Liang Song, Xiaodong Zhang, Yaming Fan, Zhongming Zeng, Yong Cai, Baoshun Zhang, Zengli Huang, Rong Huang, Jun Han
Summary: A thin SiN(x) film deposited on the p-GaN layer before H plasma implantation reduces gate reverse leakage current by four orders of magnitude and increases the OFF-state breakdown voltage by 89%. It also improves the dynamic performance of the device by blocking excessive H plasma and reducing damage in the AlGaN barrier layer.
APPLIED PHYSICS EXPRESS
(2022)
Article
Chemistry, Analytical
Moath Alathbah, Khaled Elgaid
Summary: This letter presents a novel approach to address the issue of metal discontinuity in AlGaN/GaN HEMTs. By extending the mesa below the gate, the proposed method ensures a planar gate configuration and improves the DC and RF performance of the device.
Article
Engineering, Electrical & Electronic
Sheng Zhang, Ke Wei, Yi-chuan Zhang, Xiao-juan Chen, Xin-Yu Liu, Jie-bin Niu
Summary: Compared to traditional single-gate devices, the dual-gate AlGaN/GaN HEMTs have higher breakdown voltage, lower gate leakage current, and higher drift threshold voltage, showing greater potential for power gain.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Article
Engineering, Electrical & Electronic
Zuoheng Jiang, Xinyu Wang, Junlei Zhao, Junting Chen, Jinjin Tang, Chengcai Wang, Haohao Chen, Sen Huang, Xiaolong Chen, Mengyuan Hua
Summary: It is found that frozen hole traps alter the gate leakage mechanism from PF emission to TAT, highlighting the importance of understanding the role of hole traps in gate leakage for accurately predicting and optimizing device performance in cryogenic temperatures.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
P. Vigneshwara Raja, Jean-Christophe Nallatamby, Mohamed Bouslama, Jean-Claude Jacquet, Raphael Sommet, Christophe Chang, Benoit Lambert
Summary: The effects of high-temperature reverse bias stress on the static and dynamic characteristics of 0.15 μm AlGaN/GaN HEMTs are investigated in this study. Changes in drain current, gate leakage current, output power, and characteristics are analyzed, and the location of traps responsible for certain effects is identified through testing and simulations.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
(2022)
Article
Engineering, Electrical & Electronic
Iqbal Preet Singh, Hassan Rahbardar Mojaver, Pouya Valizadeh
Summary: The study investigates the reverse gate-leakage of AlGaN/GaN HFETs at different drain-source voltages, revealing that Fowler-Nordheim tunneling contributes to leakage predominantly at the gate center for lower drain-source voltages, while at higher drain-source voltages, leakage occurs mainly at the drain edge. The electron effective mass is consistently chosen within an acceptable range for analyzing gate-leakage.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Materials Science, Multidisciplinary
S. Zhang, K. Wei, Y. C. Zhang, X. J. Chen, S. Huang, H. B. Yin, G. G. Liu, T. T. Yuan, Y. K. Zheng, X. H. Wang, X. Y. Liu
Summary: The use of PEALD SiN as the gate dielectric layer in GaN MIS-HEMTs leads to a significant reduction in gate leakage current, improvement in drain current characteristics, and enhanced 2DEG channel mobility. The interface states distribution is quantitatively described by CC-DLTS, showcasing a low density of interface traps.
Article
Materials Science, Multidisciplinary
Zixin Zhen, Quan Wang, Yanbin Qin, Changxi Chen, Jiankai Xu, Lijuan Jiang, Hongling Xiao, Qian Wang, Xiaoliang Wang, Manqing Tan, Chun Feng
Summary: This article proposes a metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with Al2O3/SiN x double insulators to achieve lower gate leakage and lower current collapse simultaneously. The proposed structure exhibits superior performance in terms of gate leakage, current collapse, and overall device performance. Additionally, the proposed structure has low requirements on fabrication techniques and induces fewer interface traps.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2022)
Article
Engineering, Electrical & Electronic
Vijaya Kumar Gurugubelli, Rekha Chithra Thomas, Shreepad Karmalkar
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2015)
Article
Engineering, Electrical & Electronic
M. G. Jaikumar, R. Ramakrishna Rao, Shreepad Karmalkar
SOLID-STATE ELECTRONICS
(2015)
Article
Engineering, Electrical & Electronic
D. Pradeep, M. Amit, Shreepad Karmalkar
IEEE ELECTRON DEVICE LETTERS
(2016)
Correction
Engineering, Electrical & Electronic
Vijaya Kumar Gurugubelli, Rekha Chithra Thomas, Shreepad Karmalkar
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2016)
Article
Physics, Applied
Vijaya Kumar Gurugubelli, Shreepad Karmalkar
JOURNAL OF APPLIED PHYSICS
(2016)
Article
Engineering, Electrical & Electronic
Shubham Jain, Vijaya Kumar Gurugubelli, Shreepad Karmalkar
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2017)
Article
Engineering, Electrical & Electronic
D. Pradeep, D. S. Rawal, Shreepad Karmalkar
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2017)
Article
Physics, Applied
Vijaya Kumar Gurugubelli, Shreepad Karmalkar
JOURNAL OF APPLIED PHYSICS
(2017)
Article
Physics, Applied
Anvar A. Shukkoor, Shreepad Karmalkar
JOURNAL OF APPLIED PHYSICS
(2017)
Article
Physics, Applied
Vijaya Kumar Gurugubelli, Shreepad Karmalkar
APPLIED PHYSICS LETTERS
(2014)
Article
Computer Science, Hardware & Architecture
Komail M. H. Badami, Shreepad Karmalkar
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
(2012)
Article
Physics, Applied
Arvind Ajoy, S. E. Laux, Kota V. R. M. Murali, Shreepad Karmalkar
JOURNAL OF APPLIED PHYSICS
(2013)
Proceedings Paper
Computer Science, Theory & Methods
A. Anvar, Shreepad Karmalkar, R. Gokul, C. Akhil
2016 29TH INTERNATIONAL CONFERENCE ON VLSI DESIGN AND 2016 15TH INTERNATIONAL CONFERENCE ON EMBEDDED SYSTEMS (VLSID)
(2016)
Proceedings Paper
Engineering, Electrical & Electronic
Vijaya Kumar Gurugubelli, Shreepad Karmalkar
2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC)
(2015)
Article
Physics, Applied
Vijaya Kumar Gurugubelli, Shreepad Karmalkar
JOURNAL OF APPLIED PHYSICS
(2015)