A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

Published 2010 View Full Article

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Title
A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 58, Issue 1, Pages 132-140
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-11-19
DOI
10.1109/ted.2010.2087339

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