Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

Published 2010 View Full Article

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Title
Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 7, Pages 662-664
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-05-13
DOI
10.1109/led.2010.2047092
References
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