Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

Published 2013 View Full Article

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Title
Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 7, Pages 073501
Publisher
AIP Publishing
Online
2013-02-20
DOI
10.1063/1.4793196
References
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