Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Published 2012 View Full Article

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Title
Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
Authors
Keywords
-
Journal
SOLID-STATE ELECTRONICS
Volume 80, Issue -, Pages 19-22
Publisher
Elsevier BV
Online
2012-11-28
DOI
10.1016/j.sse.2012.09.010

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