Atomic-layer deposited thulium oxide as a passivation layer on germanium

Conduction band offset at GeO2/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies

(2013) W. F. Zhang et al.   APPLIED PHYSICS LETTERS

Thulium Silicate Interfacial Layer for Scalable High-k/Metal Gate Stacks

(2013) Eugenio Dentoni Litta et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Rare Earth Oxide Capping Effect on La2O3Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5 nm

(2013) Miyuki Kouda et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

(2013) M. K. Hudait et al.   JOURNAL OF APPLIED PHYSICS

High-Deposition-Rate Atomic Layer Deposition of Thulium Oxide from TmCp3and H2O

(2013) Eugenio Dentoni Litta et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Interface engineering of Ge using thulium oxide: Band line-up study

(2013) I.Z. Mitrovic et al.   MICROELECTRONIC ENGINEERING

Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

(2013) Shinichi Takagi et al.   MICROELECTRONIC ENGINEERING

Electronic properties at the oxide interface with silicon and germanium through x-ray induced oxide charging

(2012) M. Perego et al.   APPLIED PHYSICS LETTERS

Band offsets of epitaxial Tm2O3 high-k dielectric films on Si substrates by X-ray photoelectron spectroscopy

(2012) J.J. Wang et al.   APPLIED SURFACE SCIENCE

A model for internal photoemission at high-k oxide/silicon energy barriers

(2012) O. Engström   JOURNAL OF APPLIED PHYSICS

Band gap and structure characterization of Tm2O3 films

(2012) Jianjun WANG et al.   JOURNAL OF RARE EARTHS

Scaling the Ge Gate Stack: Toward Sub 1 nm EOT

(2012) S. Sioncke et al.   ECS Journal of Solid State Science and Technology

Charging phenomena in dielectric/semiconductor heterostructures during x-ray photoelectron spectroscopy measurements

(2011) M. Perego et al.   JOURNAL OF APPLIED PHYSICS

Single crystalline Tm2O3 films grown on Si (001) by atomic oxygen assisted molecular beam epitaxy

(2011) T. Ji et al.   JOURNAL OF CRYSTAL GROWTH

Comparison of methods to determine bandgaps of ultrathin HfO2 films using spectroscopic ellipsometry

(2011) Ming Di et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Band offsets at Ge/GeO2 interfaces: Effect of different interfacial bonding patterns

(2011) Peter Broqvist et al.   MICROELECTRONIC ENGINEERING

Atomic structure, electronic structure, and band offsets at Ge:GeO:GeO2 interfaces

(2010) L. Lin et al.   APPLIED PHYSICS LETTERS

O3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates

(2010) L. Lamagna et al.   JOURNAL OF APPLIED PHYSICS

Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy

(2010) E. Bersch et al.   JOURNAL OF APPLIED PHYSICS

Combining HRTEM–EELS nano-analysis with capacitance–voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics

(2010) S. Schamm-Chardon et al.   MICROELECTRONIC ENGINEERING

Band offsets at the Ge/GeO2 interface through hybrid density functionals

(2009) Peter Broqvist et al.   APPLIED PHYSICS LETTERS

Impact of oxide defects on band offset at GeO2/Ge interface

(2009) M. Yang et al.   APPLIED PHYSICS LETTERS

Low-Temperature Formation of High-Quality $ \hbox{GeO}_{2}$ Interlayer for High-$\kappa$ Gate Dielectrics/Ge by Electron-Cyclotron-Resonance Plasma Techniques

(2009) Yukio Fukuda et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

(2009) Takashi Sasada et al.   JOURNAL OF APPLIED PHYSICS

Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack

(2009) Masaharu Kobayashi et al.   JOURNAL OF APPLIED PHYSICS