- Home
- Publications
- Publication Search
- Publication Details
Title
Scaling the Ge Gate Stack: Toward Sub 1 nm EOT
Authors
Keywords
-
Journal
ECS Journal of Solid State Science and Technology
Volume 1, Issue 3, Pages P127-P132
Publisher
The Electrochemical Society
Online
2012-08-15
DOI
10.1149/2.005203jss
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Thin layer composition profiling with angular resolved x-ray photoemission spectroscopy: Factors affecting quantitative results
- (2012) T. Conard et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor
- (2011) S. Sioncke et al. JOURNAL OF APPLIED PHYSICS
- Ozone Based Atomic Layer Deposition of Hafnium Oxide and Impact of Nitrogen Oxide Species
- (2011) Annelies Delabie et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Impact of GeOx interfacial layer thickness on Al2O3/Ge MOS interface properties
- (2011) R. Zhang et al. MICROELECTRONIC ENGINEERING
- Atomic layer deposition of Al2O3 on S-passivated Ge
- (2011) S. Sioncke et al. MICROELECTRONIC ENGINEERING
- Ge/GeO2Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
- (2009) Choong Hyun Lee et al. Applied Physics Express
- On the interface state density at In0.53Ga0.47As/oxide interfaces
- (2009) G. Brammertz et al. APPLIED PHYSICS LETTERS
- H[sub 2]O- and O[sub 3]-Based Atomic Layer Deposition of High-κ Dielectric Films on GeO[sub 2] Passivation Layers
- (2009) A. Delabie et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Opportunities and challenges for Ge CMOS – Control of interfacing field on Ge is a key (Invited Paper)
- (2009) Akira Toriumi et al. MICROELECTRONIC ENGINEERING
- Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2
- (2008) M. Houssa et al. APPLIED PHYSICS LETTERS
- Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
- (2008) Hiroshi Matsubara et al. APPLIED PHYSICS LETTERS
- Control of high-k/germanium interface properties through selection of high-k materials and suppression of GeO volatilization
- (2008) Koji Kita et al. APPLIED SURFACE SCIENCE
- Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics
- (2008) Koji Kita et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Passivation of Ge(100)∕GeO[sub 2]∕high-κ Gate Stacks Using Thermal Oxide Treatments
- (2007) F. Bellenger et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Add your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload NowBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started