A model for internal photoemission at high-k oxide/silicon energy barriers

Photoemission yield and the electron escape depth determination in metal–oxide–semiconductor structures on N+-type and P+-type silicon substrates

(2012) H. M. Przewlocki et al.   JOURNAL OF APPLIED PHYSICS

On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks

(2012) I. Z. Mitrovic et al.   JOURNAL OF APPLIED PHYSICS

Band offsets of atomic layer deposited Al2O3 and HfO2 on Si measured by linear and nonlinear internal photoemission

(2012) M. Lei et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Phonon-Assisted Optical Absorption in Silicon from First Principles

(2012) Jesse Noffsinger et al.   PHYSICAL REVIEW LETTERS

Charging phenomena in dielectric/semiconductor heterostructures during x-ray photoelectron spectroscopy measurements

(2011) M. Perego et al.   JOURNAL OF APPLIED PHYSICS

Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy

(2010) E. Bersch et al.   JOURNAL OF APPLIED PHYSICS