Atomic structure, electronic structure, and band offsets at Ge:GeO:GeO2 interfaces

Influence of the oxidizing species on the Ge dangling bonds at the (100)Ge/GeO2 interface

(2010) Silvia Baldovino et al.   APPLIED PHYSICS LETTERS

Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices

(2010) Shankar Swaminathan et al.   APPLIED PHYSICS LETTERS

High FET Performance for a Future CMOS $\hbox{GeO}_{2}$ -Based Technology

(2010) Florence Bellenger et al.   IEEE ELECTRON DEVICE LETTERS

Desorption kinetics of GeO from GeO2/Ge structure

(2010) Koji Kita et al.   JOURNAL OF APPLIED PHYSICS

Ge/GeO2Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics

(2009) Choong Hyun Lee et al.   Applied Physics Express

Impact of oxide defects on band offset at GeO2/Ge interface

(2009) M. Yang et al.   APPLIED PHYSICS LETTERS

Atomistic model structure of the Ge(100)–GeO2 interface

(2009) Peter Broqvist et al.   MICROELECTRONIC ENGINEERING

Nontrigonal Ge dangling bond interface defect in condensation-grown(100)Si1−xGex/SiO2

(2009) A. Stesmans et al.   PHYSICAL REVIEW B

Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates

(2008) G. Lucovsky et al.   APPLIED SURFACE SCIENCE

High-k/Ge MOSFETs for future nanoelectronics

(2008) Yoshiki Kamata   Materials Today