Low-Temperature Formation of High-Quality $ \hbox{GeO}_{2}$ Interlayer for High-$\kappa$ Gate Dielectrics/Ge by Electron-Cyclotron-Resonance Plasma Techniques
Low-Temperature Formation of High-Quality $ \hbox{GeO}_{2}$ Interlayer for High-$\kappa$ Gate Dielectrics/Ge by Electron-Cyclotron-Resonance Plasma Techniques
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