标题
Atomic-layer deposited thulium oxide as a passivation layer on germanium
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 117, Issue 21, Pages 214104
出版商
AIP Publishing
发表日期
2015-06-04
DOI
10.1063/1.4922121
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Conduction band offset at GeO2/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies
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