Conduction band offset at GeO2/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies

Erratum: “Band offsets at the Ge/GeO2 interface through hybrid density functionals” [Appl. Phys. Lett. 94, 141911 (2009)]

(2011) Peter Broqvist et al.   APPLIED PHYSICS LETTERS

High-Electron-Mobility $\hbox{Ge/GeO}_{2}$ n-MOSFETs With Two-Step Oxidation

(2011) Choong Hyun Lee et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-Mobility Ge pMOSFET With 1-nm EOT $\hbox{Al}_{2} \hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stack Fabricated by Plasma Post Oxidation

(2011) Rui Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Charging phenomena in dielectric/semiconductor heterostructures during x-ray photoelectron spectroscopy measurements

(2011) M. Perego et al.   JOURNAL OF APPLIED PHYSICS

Band offsets at Ge/GeO2 interfaces: Effect of different interfacial bonding patterns

(2011) Peter Broqvist et al.   MICROELECTRONIC ENGINEERING

Band offsets of Al2O3/InxGa1−xAs (x=0.53 and 0.75) and the effects of postdeposition annealing

(2010) N. V. Nguyen et al.   APPLIED PHYSICS LETTERS

Atomic structure, electronic structure, and band offsets at Ge:GeO:GeO2 interfaces

(2010) L. Lin et al.   APPLIED PHYSICS LETTERS

Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy

(2010) E. Bersch et al.   JOURNAL OF APPLIED PHYSICS

Impact of oxide defects on band offset at GeO2/Ge interface

(2009) M. Yang et al.   APPLIED PHYSICS LETTERS

Low-Temperature Formation of High-Quality $ \hbox{GeO}_{2}$ Interlayer for High-$\kappa$ Gate Dielectrics/Ge by Electron-Cyclotron-Resonance Plasma Techniques

(2009) Yukio Fukuda et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack

(2009) Masaharu Kobayashi et al.   JOURNAL OF APPLIED PHYSICS

Opportunities and challenges for Ge CMOS – Control of interfacing field on Ge is a key (Invited Paper)

(2009) Akira Toriumi et al.   MICROELECTRONIC ENGINEERING

Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2

(2008) V. V. Afanas’ev et al.   APPLIED PHYSICS LETTERS