Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

Published 2013 View Full Article

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Title
Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties
Authors
Keywords
-
Journal
MICROELECTRONIC ENGINEERING
Volume 109, Issue -, Pages 389-395
Publisher
Elsevier BV
Online
2013-05-03
DOI
10.1016/j.mee.2013.04.034

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