O3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates
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Title
O3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 108, Issue 8, Pages 084108
Publisher
AIP Publishing
Online
2010-10-28
DOI
10.1063/1.3499258
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Note: Only part of the references are listed.- Gate Oxides Beyond SiO2
- (2011) Darrell G. Schlom et al. MRS BULLETIN
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- (2009) S. Abermann et al. APPLIED PHYSICS LETTERS
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- (2009) Yi Zhao et al. APPLIED PHYSICS LETTERS
- H[sub 2]O- and O[sub 3]-Based Atomic Layer Deposition of High-κ Dielectric Films on GeO[sub 2] Passivation Layers
- (2009) A. Delabie et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Chemical and structural properties of atomic layer deposited La2O3 films capped with a thin Al2O3 layer
- (2009) X. L. Li et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Metal-oxide-semiconductor devices on p-type Ge with La[sub 2]O[sub 3] and ZrO[sub 2]/La[sub 2]O[sub 3] as gate dielectric and the effect of postmetallization anneal
- (2009) S. F. Galata et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Lanthanum germanate as dielectric for scaled Germanium metal–oxide–semiconductor devices
- (2009) C. Andersson et al. MICROELECTRONIC ENGINEERING
- Post metallization annealing study in La2O3/Ge MOS structure
- (2009) J. Song et al. MICROELECTRONIC ENGINEERING
- Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone
- (2009) B. Lee et al. MICROELECTRONIC ENGINEERING
- Characterization of the annealing impact on La2O3/HfO2 and HfO2/La2O3 stacks for MOS applications
- (2009) D. Rébiscoul et al. MICROELECTRONIC ENGINEERING
- First-principles study of the structural and electronic properties of (100)Ge∕Ge(M)O2 interfaces (M=Al, La, or Hf)
- (2008) M. Houssa et al. APPLIED PHYSICS LETTERS
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- (2008) V. V. Afanas’ev et al. APPLIED PHYSICS LETTERS
- Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates
- (2008) G. Mavrou et al. APPLIED PHYSICS LETTERS
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- (2008) Koji Kita et al. APPLIED SURFACE SCIENCE
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- (2008) Jaakko Niinistö et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density
- (2008) Duygu Kuzum et al. IEEE ELECTRON DEVICE LETTERS
- Metal Electrode/High-$k$ Dielectric Gate-Stack Technology for Power Management
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- Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices
- (2008) G. Mavrou et al. JOURNAL OF APPLIED PHYSICS
- Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La[sub 2]O[sub 3]∕Si Interfaces for Advanced Gate Stacks
- (2008) S. Schamm et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- High-k/Ge MOSFETs for future nanoelectronics
- (2008) Yoshiki Kamata Materials Today
- Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing
- (2008) D. Tsoutsou et al. MICROELECTRONIC ENGINEERING
- Applications of atomic layer deposition to nanofabrication and emerging nanodevices
- (2008) Hyungjun Kim et al. THIN SOLID FILMS
- Physical and Electrical Properties of Atomic-Layer-Deposited Hf[sub x]Zr[sub 1−x]O[sub 2] with TEMAHf, TEMAZr, and Ozone
- (2007) D. H. Triyoso et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
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