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Title
Vertical Transistors Based on 2D Materials: Status and Prospects
Authors
Keywords
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Journal
Crystals
Volume 8, Issue 2, Pages 70
Publisher
MDPI AG
Online
2018-01-31
DOI
10.3390/cryst8020070
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Note: Only part of the references are listed.- Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures
- (2017) G. William Burg et al. NANO LETTERS
- Hot Electron Transistor with van der Waals Base-Collector Heterojunction and High-Performance GaN Emitter
- (2017) Ahmad Zubair et al. NANO LETTERS
- High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates
- (2017) R. Dagher et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors
- (2017) Filippo Giannazzo et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures
- (2017) Filippo Giannazzo et al. Beilstein Journal of Nanotechnology
- Atomic Layer Deposition for Graphene Device Integration
- (2017) René H. J. Vervuurt et al. Advanced Materials Interfaces
- Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride
- (2016) Dmitry Ruzmetov et al. ACS Nano
- Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation
- (2016) Ankur Nipane et al. ACS Nano
- Wetting-Assisted Crack- and Wrinkle-Free Transfer of Wafer-Scale Graphene onto Arbitrary Substrates over a Wide Range of Surface Energies
- (2016) Hyun Ho Kim et al. ADVANCED FUNCTIONAL MATERIALS
- A Rational Strategy for Graphene Transfer on Substrates with Rough Features
- (2016) Jin-Yong Hong et al. ADVANCED MATERIALS
- 2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures
- (2016) Tania Roy et al. APPLIED PHYSICS LETTERS
- Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors
- (2016) Sangwoo Kang et al. NANO LETTERS
- Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application
- (2016) Amirhasan Nourbakhsh et al. NANO LETTERS
- Mixed-dimensional van der Waals heterostructures
- (2016) Deep Jariwala et al. NATURE MATERIALS
- Graphene integration with nitride semiconductors for high power and high frequency electronics
- (2016) F. Giannazzo et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Effect of temperature-bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2transistors
- (2016) F. Giannazzo et al. Physica Status Solidi-Rapid Research Letters
- MoS2 transistors with 1-nanometer gate lengths
- (2016) S. B. Desai et al. SCIENCE
- Vertical MoS 2 / h BN/MoS 2 interlayer tunneling field effect transistor
- (2016) Ashok Srivastava et al. SOLID-STATE ELECTRONICS
- Enhanced Resonant Tunneling in Symmetric 2D Semiconductor Vertical Heterostructure Transistors
- (2015) Philip M. Campbell et al. ACS Nano
- Large-Area Epitaxial Monolayer MoS2
- (2015) Dumitru Dumcenco et al. ACS Nano
- Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces
- (2015) Rafik Addou et al. ACS Nano
- Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene
- (2015) Grzegorz Lupina et al. ACS Nano
- Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors
- (2015) Tania Roy et al. ACS Nano
- Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier
- (2015) Zhichao Yang et al. APPLIED PHYSICS LETTERS
- Chalcogen vacancies in monolayer transition metal dichalcogenides and Fermi level pinning at contacts
- (2015) Y. Guo et al. APPLIED PHYSICS LETTERS
- Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET
- (2015) Sangwoo Kang et al. IEEE ELECTRON DEVICE LETTERS
- Common Emitter Current Gain >1 in III-N Hot Electron Transistors With 7-nm GaN/InGaN Base
- (2015) Geetak Gupta et al. IEEE ELECTRON DEVICE LETTERS
- Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment
- (2015) Rusen Yan et al. NANO LETTERS
- High-Current Gain Two-Dimensional MoS2-Base Hot-Electron Transistors
- (2015) Carlos M. Torres et al. NANO LETTERS
- Radio Frequency Transistors and Circuits Based on CVD MoS2
- (2015) Atresh Sanne et al. NANO LETTERS
- High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits
- (2015) Lili Yu et al. NANO LETTERS
- Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors
- (2015) S. Vaziri et al. Nanoscale
- A subthermionic tunnel field-effect transistor with an atomically thin channel
- (2015) Deblina Sarkar et al. NATURE
- High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
- (2015) Kibum Kang et al. NATURE
- Nanoscale inhomogeneity of the Schottky barrier and resistivity inMoS2multilayers
- (2015) F. Giannazzo et al. PHYSICAL REVIEW B
- Going ballistic: Graphene hot electron transistors
- (2015) S. Vaziri et al. SOLID STATE COMMUNICATIONS
- Synthesis of large single-crystal hexagonal boron nitride grains on Cu–Ni alloy
- (2015) Guangyuan Lu et al. Nature Communications
- Exploring atomic defects in molybdenum disulphide monolayers
- (2015) Jinhua Hong et al. Nature Communications
- Toward Low-Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides
- (2014) Saptarshi Das et al. ACS Nano
- High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors
- (2014) Mahmut Tosun et al. ACS Nano
- Growth of Wrinkle-Free Graphene on Texture-Controlled Platinum Films and Thermal-Assisted Transfer of Large-Scale Patterned Graphene
- (2014) Jae-Kyung Choi et al. ACS Nano
- Defect-Dominated Doping and Contact Resistance in MoS2
- (2014) Stephen McDonnell et al. ACS Nano
- Direct Synthesis of van der Waals Solids
- (2014) Yu-Chuan Lin et al. ACS Nano
- Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
- (2014) Han Liu et al. ACS Nano
- Field-Effect Transistors Built from All Two-Dimensional Material Components
- (2014) Tania Roy et al. ACS Nano
- Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures
- (2014) Rai Moriya et al. APPLIED PHYSICS LETTERS
- Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition
- (2014) A. Michon et al. APPLIED PHYSICS LETTERS
- Microscopic mechanisms of graphene electrolytic delamination from metal substrates
- (2014) G. Fisichella et al. APPLIED PHYSICS LETTERS
- Benchmarking Transition Metal Dichalcogenide MOSFET in the Ultimate Physical Scaling Limit
- (2014) Kausik Majumdar et al. IEEE ELECTRON DEVICE LETTERS
- Band-Edge Steepness Obtained From Esaki/Backward Diode Current–Voltage Characteristics
- (2014) Sapan Agarwal et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures
- (2014) Babak Fallahazad et al. NANO LETTERS
- MoS2 Transistors Operating at Gigahertz Frequencies
- (2014) Daria Krasnozhon et al. NANO LETTERS
- Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution
- (2014) Joonki Suh et al. NANO LETTERS
- Growth of Large Single-Crystalline Two-Dimensional Boron Nitride Hexagons on Electropolished Copper
- (2014) Roland Yingjie Tay et al. NANO LETTERS
- MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts
- (2014) Steven Chuang et al. NANO LETTERS
- Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale
- (2014) Gabriele Fisichella et al. Nanoscale
- Two-dimensional heterostructures: fabrication, characterization, and application
- (2014) Hong Wang et al. Nanoscale
- Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
- (2014) Rajesh Kappera et al. NATURE MATERIALS
- Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures
- (2014) A. Mishchenko et al. Nature Nanotechnology
- Black phosphorus field-effect transistors
- (2014) Likai Li et al. Nature Nanotechnology
- Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium
- (2014) J.-H. Lee et al. SCIENCE
- Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics
- (2014) Rui Cheng et al. Nature Communications
- Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering
- (2014) Zhihao Yu et al. Nature Communications
- Two-dimensional flexible nanoelectronics
- (2014) Deji Akinwande et al. Nature Communications
- Hot-Electron Transistors for Terahertz Operation Based on Two-Dimensional Crystal Heterostructures
- (2014) Byoung Don Kong et al. Physical Review Applied
- Delaminated Graphene at Silicon Carbide Facets: Atomic Scale Imaging and Spectroscopy
- (2013) Giuseppe Nicotra et al. ACS Nano
- On Monolayer ${\rm MoS}_{2}$ Field-Effect Transistors at the Scaling Limit
- (2013) Leitao Liu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition
- (2013) A. Michon et al. JOURNAL OF APPLIED PHYSICS
- A Graphene-Based Hot Electron Transistor
- (2013) Sam Vaziri et al. NANO LETTERS
- Vertical Graphene-Base Hot-Electron Transistor
- (2013) Caifu Zeng et al. NANO LETTERS
- Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium
- (2013) Hui Fang et al. NANO LETTERS
- Van der Waals heterostructures
- (2013) A. K. Geim et al. NATURE
- Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
- (2013) Arend M. van der Zande et al. NATURE MATERIALS
- Epitaxial growth of single-domain graphene on hexagonal boron nitride
- (2013) Wei Yang et al. NATURE MATERIALS
- Mobility engineering and a metal–insulator transition in monolayer MoS2
- (2013) Branimir Radisavljevic et al. NATURE MATERIALS
- Measurement of mobility in dual-gated MoS2 transistors
- (2013) Michael S. Fuhrer et al. Nature Nanotechnology
- Intrinsic electrical transport properties of monolayer silicene and MoS2from first principles
- (2013) Xiaodong Li et al. PHYSICAL REVIEW B
- Resonant tunnelling and negative differential conductance in graphene transistors
- (2013) L. Britnell et al. Nature Communications
- Toward the Controlled Synthesis of Hexagonal Boron Nitride Films
- (2012) Ariel Ismach et al. ACS Nano
- Atomic Layer Deposition of Dielectrics on Graphene Using Reversibly Physisorbed Ozone
- (2012) Srikar Jandhyala et al. ACS Nano
- Monolayer $\hbox{MoS}_{2}$ Transistors Beyond the Technology Road Map
- (2012) Khairul Alam et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Graphene for radio frequency electronics
- (2012) Lei Liao et al. Materials Today
- van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates
- (2012) Yumeng Shi et al. NANO LETTERS
- State-of-the-Art Graphene High-Frequency Electronics
- (2012) Yanqing Wu et al. NANO LETTERS
- High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
- (2012) Hui Fang et al. NANO LETTERS
- High Performance Multilayer MoS2 Transistors with Scandium Contacts
- (2012) Saptarshi Das et al. NANO LETTERS
- Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters
- (2012) Woo Jong Yu et al. NATURE MATERIALS
- Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics
- (2012) Thanasis Georgiou et al. Nature Nanotechnology
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC
- (2012) F. Giannazzo et al. PHYSICAL REVIEW B
- Phonon-limited mobility inn-type single-layer MoS2from first principles
- (2012) Kristen Kaasbjerg et al. PHYSICAL REVIEW B
- High-frequency self-aligned graphene transistors with transferred gate stacks
- (2012) R. Cheng et al. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
- Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
- (2012) L. Britnell et al. SCIENCE
- Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
- (2012) H. Yang et al. SCIENCE
- The quasi-free-standing nature of graphene on H-saturated SiC(0001)
- (2011) F. Speck et al. APPLIED PHYSICS LETTERS
- Experimental Demonstration of III-Nitride Hot-Electron Transistor With GaN Base
- (2011) Sansaptak Dasgupta et al. IEEE ELECTRON DEVICE LETTERS
- Mapping the Density of Scattering Centers Limiting the Electron Mean Free Path in Graphene
- (2011) Filippo Giannazzo et al. NANO LETTERS
- How Good Can Monolayer MoS2Transistors Be?
- (2011) Youngki Yoon et al. NANO LETTERS
- Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature
- (2011) Alexander S. Mayorov et al. NANO LETTERS
- A heteroepitaxial perovskite metal-base transistor
- (2011) Takeaki Yajima et al. NATURE MATERIALS
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)
- (2011) Carmelo Vecchio et al. Nanoscale Research Letters
- Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas
- (2010) S. Sonde et al. APPLIED PHYSICS LETTERS
- Graphene-Based Ambipolar RF Mixers
- (2010) Han Wang et al. IEEE ELECTRON DEVICE LETTERS
- Boron nitride substrates for high-quality graphene electronics
- (2010) C. R. Dean et al. Nature Nanotechnology
- Graphene transistors
- (2010) Frank Schwierz Nature Nanotechnology
- 100-GHz Transistors from Wafer-Scale Epitaxial Graphene
- (2010) Y.-M. Lin et al. SCIENCE
- Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric
- (2009) Seyoung Kim et al. APPLIED PHYSICS LETTERS
- Large-scale pattern growth of graphene films for stretchable transparent electrodes
- (2009) Keun Soo Kim et al. NATURE
- Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
- (2009) Konstantin V. Emtsev et al. NATURE MATERIALS
- Electrical properties of the graphene/4H-SiC(0001) interface probed by scanning current spectroscopy
- (2009) S. Sonde et al. PHYSICAL REVIEW B
- Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
- (2009) X. Li et al. SCIENCE
- Homogeneous large-area graphene layer growth on6H-SiC(0001)
- (2008) C. Virojanadara et al. PHYSICAL REVIEW B
- Temperature-Dependent Transport in Suspended Graphene
- (2008) K. I. Bolotin et al. PHYSICAL REVIEW LETTERS
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