Monolayer $\hbox{MoS}_{2}$ Transistors Beyond the Technology Road Map

Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

(2012)   APPLIED PHYSICS LETTERS

$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric

(2012) Han Liu et al.   IEEE ELECTRON DEVICE LETTERS

Material Selection for Minimizing Direct Tunneling in Nanowire Transistors

(2012) Somaia Sarwat Sylvia et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

(2011) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

On Backscattering and Mobility in Nanoscale Silicon MOSFETs

(2009) Changwook Jeong et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The Quantum and Classical Capacitance Limits of InSb and InAs Nanowire FETs

(2009) M. Abul Khayer et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Outperforming the Conventional Scaling Rules in the Quantum-Capacitance Limit

(2008) J. Knoch et al.   IEEE ELECTRON DEVICE LETTERS

A Tight-Binding Study of the Ballistic Injection Velocity for Ultrathin-Body SOI MOSFETs

(2008) Yang Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES