Effect of temperature-bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2transistors
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Title
Effect of temperature-bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2transistors
Authors
Keywords
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Journal
Physica Status Solidi-Rapid Research Letters
Volume 10, Issue 11, Pages 797-801
Publisher
Wiley
Online
2016-09-15
DOI
10.1002/pssr.201600209
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Related references
Note: Only part of the references are listed.- Thermally activated trap charges responsible for hysteresis in multilayer MoS2 field-effect transistors
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- High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
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- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
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