Resonant tunnelling and negative differential conductance in graphene transistors
Published 2013 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Resonant tunnelling and negative differential conductance in graphene transistors
Authors
Keywords
-
Journal
Nature Communications
Volume 4, Issue 1, Pages -
Publisher
Springer Nature
Online
2013-04-30
DOI
10.1038/ncomms2817
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect Transistor
- (2013) Pei Zhao et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Resonant and nondissipative tunneling in independently contacted graphene structures
- (2013) F. T. Vasko PHYSICAL REVIEW B
- Lateral Graphene–hBCN Heterostructures as a Platform for Fully Two-Dimensional Transistors
- (2012) Gianluca Fiori et al. ACS Nano
- Three-Terminal Graphene Negative Differential Resistance Devices
- (2012) Yanqing Wu et al. ACS Nano
- Modeling of a vertical tunneling graphene heterojunction field-effect transistor
- (2012) S. Bala Kumar et al. APPLIED PHYSICS LETTERS
- Single-particle tunneling in doped graphene-insulator-graphene junctions
- (2012) R. M. Feenstra et al. JOURNAL OF APPLIED PHYSICS
- Resonant tunnelling diodes based on graphene/h-BN heterostructure
- (2012) V Hung Nguyen et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers
- (2012) Liam Britnell et al. NANO LETTERS
- Graphene and boron nitride lateral heterostructures for atomically thin circuitry
- (2012) Mark P. Levendorf et al. NATURE
- Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
- (2012) S. J. Haigh et al. NATURE MATERIALS
- Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics
- (2012) Thanasis Georgiou et al. Nature Nanotechnology
- Emergence of superlattice Dirac points in graphene on hexagonal boron nitride
- (2012) Matthew Yankowitz et al. Nature Physics
- Tunneling spectroscopy of graphene-boron-nitride heterostructures
- (2012) F. Amet et al. PHYSICAL REVIEW B
- Embedded boron nitride domains in graphene nanoribbons for transport gap engineering
- (2012) Alejandro Lopez-Bezanilla et al. PHYSICAL REVIEW B
- Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
- (2012) L. Britnell et al. SCIENCE
- Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
- (2012) H. Yang et al. SCIENCE
- Graphene based heterostructures
- (2012) C. Dean et al. SOLID STATE COMMUNICATIONS
- Resonant-tunnelling-diode oscillators operating at frequencies above 1.1 THz
- (2011) Michael Feiginov et al. APPLIED PHYSICS LETTERS
- In-plane and tunneling pressure sensors based on graphene/hexagonal boron nitride heterostructures
- (2011) Yang Xu et al. APPLIED PHYSICS LETTERS
- BN/Graphene/BN Transistors for RF Applications
- (2011) Han Wang et al. IEEE ELECTRON DEVICE LETTERS
- Transport properties of a single layer armchair h-BNC heterostructure
- (2011) Ming Qiu et al. JOURNAL OF APPLIED PHYSICS
- Local Electronic Properties of Graphene on a BN Substrate via Scanning Tunneling Microscopy
- (2011) Régis Decker et al. NANO LETTERS
- Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride
- (2011) Jiamin Xue et al. NATURE MATERIALS
- Tunable metal–insulator transition in double-layer graphene heterostructures
- (2011) L. A. Ponomarenko et al. Nature Physics
- Vertical field-effect transistor based on wave-function extension
- (2011) A. Sciambi et al. PHYSICAL REVIEW B
- Low-bias negative differential resistance in graphene nanoribbon superlattices
- (2011) Gerson J. Ferreira et al. PHYSICAL REVIEW B
- Ni(111)|graphene|h-BN junctions as ideal spin injectors
- (2011) V. M. Karpan et al. PHYSICAL REVIEW B
- Correlated Charged Impurity Scattering in Graphene
- (2011) Jun Yan et al. PHYSICAL REVIEW LETTERS
- Theory of 2D Transport in Graphene for Correlated Disorder
- (2011) Qiuzi Li et al. PHYSICAL REVIEW LETTERS
- Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature
- (2010) Safumi Suzuki et al. APPLIED PHYSICS LETTERS
- Boron nitride substrates for high-quality graphene electronics
- (2010) C. R. Dean et al. Nature Nanotechnology
- Electronic transport and spin-polarization effects of relativisticlike particles in mesoscopic graphene structures
- (2008) V. Nam Do et al. JOURNAL OF APPLIED PHYSICS
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started