Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation

Published 2016 View Full Article

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Title
Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation
Authors
Keywords
-
Journal
ACS Nano
Volume 10, Issue 2, Pages 2128-2137
Publisher
American Chemical Society (ACS)
Online
2016-01-21
DOI
10.1021/acsnano.5b06529

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