Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition
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Title
Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 113, Issue 20, Pages 203501
Publisher
AIP Publishing
Online
2013-05-24
DOI
10.1063/1.4806998
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Related references
Note: Only part of the references are listed.- Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC
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- Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition
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- Low temperature growth of epitaxial graphene on SiC induced by carbon evaporation
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- Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation
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- Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8
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- Rotational disorder in few-layer graphene films on6H−SiC(000−1): A scanning tunneling microscopy study
- (2008) François Varchon et al. PHYSICAL REVIEW B
- Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study
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- Why Multilayer Graphene on4H−SiC(0001¯)Behaves Like a Single Sheet of Graphene
- (2008) J. Hass et al. PHYSICAL REVIEW LETTERS
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