Chalcogen vacancies in monolayer transition metal dichalcogenides and Fermi level pinning at contacts

Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2

(2015) A.T. Hanbicki et al.   SOLID STATE COMMUNICATIONS

Toward Low-Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides

(2014) Saptarshi Das et al.   ACS Nano

Defect-Dominated Doping and Contact Resistance in MoS2

(2014) Stephen McDonnell et al.   ACS Nano

Role of Metal Contacts in High-Performance Phototransistors Based on WSe2 Monolayers

(2014) Wenjing Zhang et al.   ACS Nano

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

(2014) Deep Jariwala et al.   ACS Nano

The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces

(2014) Cheng Gong et al.   NANO LETTERS

MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts

(2014) Steven Chuang et al.   NANO LETTERS

Large, non-saturating magnetoresistance in WTe2

(2014) Mazhar N. Ali et al.   NATURE

Probing excitonic dark states in single-layer tungsten disulphide

(2014) Ziliang Ye et al.   NATURE

Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

(2014) Jiahao Kang et al.   Physical Review X

Realistic Metal–Graphene Contact Structures

(2013) Cheng Gong et al.   ACS Nano

WSe2 field effect transistors with enhanced ambipolar characteristics

(2013) Saptarshi Das et al.   APPLIED PHYSICS LETTERS

Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2

(2013) N. R. Pradhan et al.   APPLIED PHYSICS LETTERS

High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

(2013) Wenzhong Bao et al.   APPLIED PHYSICS LETTERS

Sulfur vacancies in monolayer MoS2 and its electrical contacts

(2013) D. Liu et al.   APPLIED PHYSICS LETTERS

Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

(2013) Cheng Gong et al.   APPLIED PHYSICS LETTERS

Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors

(2013) Wei Liu et al.   NANO LETTERS

Intrinsic Structural Defects in Monolayer Molybdenum Disulfide

(2013) Wu Zhou et al.   NANO LETTERS

Channel Length Scaling of MoS2 MOSFETs

(2012) Han Liu et al.   ACS Nano

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

Ambipolar MoS2 Thin Flake Transistors

(2012) Yijin Zhang et al.   NANO LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides

(2012) Ashwin Ramasubramaniam   PHYSICAL REVIEW B

Designing Electrical Contacts toMoS2Monolayers: A Computational Study

(2012) Igor Popov et al.   PHYSICAL REVIEW LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Screened exchange density functional applied to solids

(2010) Stewart J. Clark et al.   PHYSICAL REVIEW B

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Assessment of correction methods for the band-gap problem and for finite-size effects in supercell defect calculations: Case studies for ZnO and GaAs

(2008) Stephan Lany et al.   PHYSICAL REVIEW B