2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures
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Title
2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 8, Pages 083111
Publisher
AIP Publishing
Online
2016-02-25
DOI
10.1063/1.4942647
References
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Related references
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- (2013) L. Britnell et al. Nature Communications
- Vertical Si-Nanowire $n$-Type Tunneling FETs With Low Subthreshold Swing ($\leq \hbox{50}\ \hbox{mV/decade}$ ) at Room Temperature
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