Vertical Transistors Based on 2D Materials: Status and Prospects

Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures

(2017) G. William Burg et al.   NANO LETTERS

Hot Electron Transistor with van der Waals Base-Collector Heterojunction and High-Performance GaN Emitter

(2017) Ahmad Zubair et al.   NANO LETTERS

High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates

(2017) R. Dagher et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

(2017) Filippo Giannazzo et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

(2017) Filippo Giannazzo et al.   Beilstein Journal of Nanotechnology

Atomic Layer Deposition for Graphene Device Integration

(2017) René H. J. Vervuurt et al.   Advanced Materials Interfaces

Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride

(2016) Dmitry Ruzmetov et al.   ACS Nano

Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation

(2016) Ankur Nipane et al.   ACS Nano

Wetting-Assisted Crack- and Wrinkle-Free Transfer of Wafer-Scale Graphene onto Arbitrary Substrates over a Wide Range of Surface Energies

(2016) Hyun Ho Kim et al.   ADVANCED FUNCTIONAL MATERIALS

A Rational Strategy for Graphene Transfer on Substrates with Rough Features

(2016) Jin-Yong Hong et al.   ADVANCED MATERIALS

2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

(2016) Tania Roy et al.   APPLIED PHYSICS LETTERS

Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors

(2016) Sangwoo Kang et al.   NANO LETTERS

Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application

(2016) Amirhasan Nourbakhsh et al.   NANO LETTERS

Mixed-dimensional van der Waals heterostructures

(2016) Deep Jariwala et al.   NATURE MATERIALS

Graphene integration with nitride semiconductors for high power and high frequency electronics

(2016) F. Giannazzo et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Effect of temperature-bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2transistors

(2016) F. Giannazzo et al.   Physica Status Solidi-Rapid Research Letters

MoS2 transistors with 1-nanometer gate lengths

(2016) S. B. Desai et al.   SCIENCE

Vertical MoS 2 / h BN/MoS 2 interlayer tunneling field effect transistor

(2016) Ashok Srivastava et al.   SOLID-STATE ELECTRONICS

Enhanced Resonant Tunneling in Symmetric 2D Semiconductor Vertical Heterostructure Transistors

(2015) Philip M. Campbell et al.   ACS Nano

Large-Area Epitaxial Monolayer MoS2

(2015) Dumitru Dumcenco et al.   ACS Nano

Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces

(2015) Rafik Addou et al.   ACS Nano

Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene

(2015) Grzegorz Lupina et al.   ACS Nano

Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors

(2015) Tania Roy et al.   ACS Nano

Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier

(2015) Zhichao Yang et al.   APPLIED PHYSICS LETTERS

Chalcogen vacancies in monolayer transition metal dichalcogenides and Fermi level pinning at contacts

(2015) Y. Guo et al.   APPLIED PHYSICS LETTERS

Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET

(2015) Sangwoo Kang et al.   IEEE ELECTRON DEVICE LETTERS

Common Emitter Current Gain >1 in III-N Hot Electron Transistors With 7-nm GaN/InGaN Base

(2015) Geetak Gupta et al.   IEEE ELECTRON DEVICE LETTERS

Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment

(2015) Rusen Yan et al.   NANO LETTERS

High-Current Gain Two-Dimensional MoS2-Base Hot-Electron Transistors

(2015) Carlos M. Torres et al.   NANO LETTERS

Radio Frequency Transistors and Circuits Based on CVD MoS2

(2015) Atresh Sanne et al.   NANO LETTERS

High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits

(2015) Lili Yu et al.   NANO LETTERS

Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors

(2015) S. Vaziri et al.   Nanoscale

A subthermionic tunnel field-effect transistor with an atomically thin channel

(2015) Deblina Sarkar et al.   NATURE

High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

(2015) Kibum Kang et al.   NATURE

Nanoscale inhomogeneity of the Schottky barrier and resistivity inMoS2multilayers

(2015) F. Giannazzo et al.   PHYSICAL REVIEW B

Going ballistic: Graphene hot electron transistors

(2015) S. Vaziri et al.   SOLID STATE COMMUNICATIONS

Synthesis of large single-crystal hexagonal boron nitride grains on Cu–Ni alloy

(2015) Guangyuan Lu et al.   Nature Communications

Exploring atomic defects in molybdenum disulphide monolayers

(2015) Jinhua Hong et al.   Nature Communications

Toward Low-Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides

(2014) Saptarshi Das et al.   ACS Nano

High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors

(2014) Mahmut Tosun et al.   ACS Nano

Growth of Wrinkle-Free Graphene on Texture-Controlled Platinum Films and Thermal-Assisted Transfer of Large-Scale Patterned Graphene

(2014) Jae-Kyung Choi et al.   ACS Nano

Defect-Dominated Doping and Contact Resistance in MoS2

(2014) Stephen McDonnell et al.   ACS Nano

Direct Synthesis of van der Waals Solids

(2014) Yu-Chuan Lin et al.   ACS Nano

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

(2014) Han Liu et al.   ACS Nano

Field-Effect Transistors Built from All Two-Dimensional Material Components

(2014) Tania Roy et al.   ACS Nano

Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures

(2014) Rai Moriya et al.   APPLIED PHYSICS LETTERS

Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

(2014) A. Michon et al.   APPLIED PHYSICS LETTERS

Microscopic mechanisms of graphene electrolytic delamination from metal substrates

(2014) G. Fisichella et al.   APPLIED PHYSICS LETTERS

Benchmarking Transition Metal Dichalcogenide MOSFET in the Ultimate Physical Scaling Limit

(2014) Kausik Majumdar et al.   IEEE ELECTRON DEVICE LETTERS

Band-Edge Steepness Obtained From Esaki/Backward Diode Current–Voltage Characteristics

(2014) Sapan Agarwal et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

(2014) Babak Fallahazad et al.   NANO LETTERS

MoS2 Transistors Operating at Gigahertz Frequencies

(2014) Daria Krasnozhon et al.   NANO LETTERS

Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution

(2014) Joonki Suh et al.   NANO LETTERS

Growth of Large Single-Crystalline Two-Dimensional Boron Nitride Hexagons on Electropolished Copper

(2014) Roland Yingjie Tay et al.   NANO LETTERS

MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts

(2014) Steven Chuang et al.   NANO LETTERS

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale

(2014) Gabriele Fisichella et al.   Nanoscale

Two-dimensional heterostructures: fabrication, characterization, and application

(2014) Hong Wang et al.   Nanoscale

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors

(2014) Rajesh Kappera et al.   NATURE MATERIALS

Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures

(2014) A. Mishchenko et al.   Nature Nanotechnology

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium

(2014) J.-H. Lee et al.   SCIENCE

Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

(2014) Rui Cheng et al.   Nature Communications

Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

(2014) Zhihao Yu et al.   Nature Communications

Two-dimensional flexible nanoelectronics

(2014) Deji Akinwande et al.   Nature Communications

Hot-Electron Transistors for Terahertz Operation Based on Two-Dimensional Crystal Heterostructures

(2014) Byoung Don Kong et al.   Physical Review Applied

Delaminated Graphene at Silicon Carbide Facets: Atomic Scale Imaging and Spectroscopy

(2013) Giuseppe Nicotra et al.   ACS Nano

On Monolayer ${\rm MoS}_{2}$ Field-Effect Transistors at the Scaling Limit

(2013) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

(2013) A. Michon et al.   JOURNAL OF APPLIED PHYSICS

A Graphene-Based Hot Electron Transistor

(2013) Sam Vaziri et al.   NANO LETTERS

Vertical Graphene-Base Hot-Electron Transistor

(2013) Caifu Zeng et al.   NANO LETTERS

Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium

(2013) Hui Fang et al.   NANO LETTERS

Van der Waals heterostructures

(2013) A. K. Geim et al.   NATURE

Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide

(2013) Arend M. van der Zande et al.   NATURE MATERIALS

Epitaxial growth of single-domain graphene on hexagonal boron nitride

(2013) Wei Yang et al.   NATURE MATERIALS

Mobility engineering and a metal–insulator transition in monolayer MoS2

(2013) Branimir Radisavljevic et al.   NATURE MATERIALS

Measurement of mobility in dual-gated MoS2 transistors

(2013) Michael S. Fuhrer et al.   Nature Nanotechnology

Intrinsic electrical transport properties of monolayer silicene and MoS2from first principles

(2013) Xiaodong Li et al.   PHYSICAL REVIEW B

Resonant tunnelling and negative differential conductance in graphene transistors

(2013) L. Britnell et al.   Nature Communications

Toward the Controlled Synthesis of Hexagonal Boron Nitride Films

(2012) Ariel Ismach et al.   ACS Nano

Atomic Layer Deposition of Dielectrics on Graphene Using Reversibly Physisorbed Ozone

(2012) Srikar Jandhyala et al.   ACS Nano

Monolayer $\hbox{MoS}_{2}$ Transistors Beyond the Technology Road Map

(2012) Khairul Alam et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Graphene for radio frequency electronics

(2012) Lei Liao et al.   Materials Today

van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates

(2012) Yumeng Shi et al.   NANO LETTERS

State-of-the-Art Graphene High-Frequency Electronics

(2012) Yanqing Wu et al.   NANO LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

(2012) Woo Jong Yu et al.   NATURE MATERIALS

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

(2012) Thanasis Georgiou et al.   Nature Nanotechnology

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC

(2012) F. Giannazzo et al.   PHYSICAL REVIEW B

Phonon-limited mobility inn-type single-layer MoS2from first principles

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

High-frequency self-aligned graphene transistors with transferred gate stacks

(2012) R. Cheng et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

(2012) L. Britnell et al.   SCIENCE

Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

(2012) H. Yang et al.   SCIENCE

The quasi-free-standing nature of graphene on H-saturated SiC(0001)

(2011) F. Speck et al.   APPLIED PHYSICS LETTERS

Experimental Demonstration of III-Nitride Hot-Electron Transistor With GaN Base

(2011) Sansaptak Dasgupta et al.   IEEE ELECTRON DEVICE LETTERS

Mapping the Density of Scattering Centers Limiting the Electron Mean Free Path in Graphene

(2011) Filippo Giannazzo et al.   NANO LETTERS

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

(2011) Alexander S. Mayorov et al.   NANO LETTERS

A heteroepitaxial perovskite metal-base transistor

(2011) Takeaki Yajima et al.   NATURE MATERIALS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)

(2011) Carmelo Vecchio et al.   Nanoscale Research Letters

Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas

(2010) S. Sonde et al.   APPLIED PHYSICS LETTERS

Graphene-Based Ambipolar RF Mixers

(2010) Han Wang et al.   IEEE ELECTRON DEVICE LETTERS

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Graphene transistors

(2010) Frank Schwierz   Nature Nanotechnology

100-GHz Transistors from Wafer-Scale Epitaxial Graphene

(2010) Y.-M. Lin et al.   SCIENCE

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

(2009) Seyoung Kim et al.   APPLIED PHYSICS LETTERS

Large-scale pattern growth of graphene films for stretchable transparent electrodes

(2009) Keun Soo Kim et al.   NATURE

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

(2009) Konstantin V. Emtsev et al.   NATURE MATERIALS

Electrical properties of the graphene/4H-SiC(0001) interface probed by scanning current spectroscopy

(2009) S. Sonde et al.   PHYSICAL REVIEW B

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

(2009) X. Li et al.   SCIENCE

Homogeneous large-area graphene layer growth on6H-SiC(0001)

(2008) C. Virojanadara et al.   PHYSICAL REVIEW B

Temperature-Dependent Transport in Suspended Graphene

(2008) K. I. Bolotin et al.   PHYSICAL REVIEW LETTERS