Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride

Published 2016 View Full Article

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Title
Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride
Authors
Keywords
-
Journal
ACS Nano
Volume 10, Issue 3, Pages 3580-3588
Publisher
American Chemical Society (ACS)
Online
2016-02-12
DOI
10.1021/acsnano.5b08008

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