In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications

Published 2017 View Full Article

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Title
In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications
Authors
Keywords
Oxygen vacancies, Band alignment, In situ XPS, UPS, Ellipsometry
Journal
Nanoscale Research Letters
Volume 12, Issue 1, Pages -
Publisher
Springer Nature
Online
2017-04-27
DOI
10.1186/s11671-017-2068-y
References
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