A Simple Strategy to Realize Super Stable Ferroelectric Capacitor via Interface Engineering

Advances in Dielectric Thin Films for Energy Storage Applications, Revealing the Promise of Group IV Binary Oxides

(2021) José P. B. Silva et al.   ACS Energy Letters

Piezoelectricity in hafnia

(2021) Sangita Dutta et al.   Nature Communications

Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping

(2019) Maxim G. Kozodaev et al.   JOURNAL OF APPLIED PHYSICS

STEM-EELS IDENTIFICATION OF TIOXNY, TIN, TI2N AND O, N DISSOLUTION IN THE TI6242S ALLOY OXIDIZED IN SYNTHETIC AIR AT 650 °C

(2019) Iman Abdallah et al.   CORROSION SCIENCE

Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition

(2019) C. Zacharaki et al.   APPLIED PHYSICS LETTERS

Ferroelectric and pyroelectric properties of polycrystalline La-doped HfO2 thin films

(2019) C. Mart et al.   APPLIED PHYSICS LETTERS

TiNx/Hf0.5Zr0.5O2/TiNx ferroelectric memory with tunable transparency and suppressed wake-up effect

(2019) Yuxing Li et al.   APPLIED PHYSICS LETTERS

Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

(2019) Terence Mittmann et al.   Advanced Materials Interfaces

The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle

(2019) Y. Zhou et al.   COMPUTATIONAL MATERIALS SCIENCE

Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode

(2019) Rongrong Cao et al.   IEEE ELECTRON DEVICE LETTERS

Demonstration of High Ferroelectricity (P$_r$ ~ 29 $\mu$ C/cm2) in Zr Rich HfxZr1–xO2 Films

(2019) Dipjyoti Das et al.   IEEE ELECTRON DEVICE LETTERS

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

(2018) T. Ali et al.   APPLIED PHYSICS LETTERS

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

(2018) Si Joon Kim et al.   APPLIED PHYSICS LETTERS

Tiered deposition of sub-5 nm ferroelectric Hf1-xZrxO2 films on metal and semiconductor substrates

(2018) Glen Walters et al.   APPLIED PHYSICS LETTERS

Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films

(2018) Taeho Kim et al.   APPLIED PHYSICS LETTERS

Impact of Plasma Treatment on Reliability Performance for HfZrOx-Based Metal-Ferroelectric-Metal Capacitors

(2018) Kuen-Yi Chen et al.   IEEE ELECTRON DEVICE LETTERS

HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications

(2017) Seungyeol Oh et al.   IEEE ELECTRON DEVICE LETTERS

Simultaneous DualEELS and EDS analysis across the ohmic contact region in 3D NAND storage and FinFET electronic devices

(2017) P. Longo et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications

(2017) Da-Peng Xu et al.   Nanoscale Research Letters

In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications

(2017) Da-Peng Xu et al.   Nanoscale Research Letters

Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

(2016) S. Starschich et al.   APPLIED PHYSICS LETTERS

A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement

(2016) Han Joon Kim et al.   Nanoscale

Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films

(2016) Everett D. Grimley et al.   Advanced Electronic Materials

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

(2015) Patrick D. Lomenzo et al.   JOURNAL OF APPLIED PHYSICS

Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films

(2015) M. H. Park et al.   Journal of Materials Chemistry C

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

(2013) Dayu Zhou et al.   APPLIED PHYSICS LETTERS

From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices

(2013) Stefan Mueller et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Investigation of oxygen-related defects and the electrical properties of atomic layer deposited HfO2 films using electron energy-loss spectroscopy

(2011) Jae Hyuck Jang et al.   JOURNAL OF APPLIED PHYSICS

Ferroelectricity in yttrium-doped hafnium oxide

(2011) J. Müller et al.   JOURNAL OF APPLIED PHYSICS

First-principles calculation of oxygen K-electron energy loss near edge structure of HfO2

(2009) T Mizoguchi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER