Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

Characteristic investigation of highly oriented Hf0.5Zr0.5O2 thin-film resistive memory devices

(2020) Xiaobing Yan et al.   APPLIED PHYSICS LETTERS

Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems

(2020) Chandreswar Mahata et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

(2020) Furqan Zahoor et al.   Nanoscale Research Letters

Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer

(2020) Muhammad Ismail et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Energy-Efficient Organic Ferroelectric Tunnel Junction Memristors for Neuromorphic Computing

(2019) Sayani Majumdar et al.   Advanced Electronic Materials

Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device

(2019) Jonas Deuermeier et al.   Nanomaterials

Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity

(2019) Tian-Yu Wang et al.   Nanoscale Research Letters

Mimicking Synaptic Behaviors with Cross-Point Structured TiOx/TiOy-Based Filamentary RRAM for Neuromorphic Applications

(2019) Jongtae Kim et al.   Journal of Electrical Engineering & Technology

Synaptic-functional and fully water-soluble transient memristor made from materials compatible with semiconductor technology

(2019) Dongqing Liu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory

(2019) Xiangxiang Ding et al.   Nanoscale Research Letters

A Multi-level Memristor Based on Al-Doped HfO2 Thin Film

(2019) Lei Wu et al.   Nanoscale Research Letters

Role of Oxygen Vacancies at the TiO 2 /HfO 2 Interface in Flexible Oxide‐Based Resistive Switching Memory

(2019) Rulin Zhang et al.   Advanced Electronic Materials

Synaptic memory devices from CoO/Nb:SrTiO 3 junction

(2019) Le Zhao et al.   Royal Society Open Science

Improving linearity by introducing Al in HfO2 as memristor synapse device

(2019) sridhar chandrasekaran et al.   NANOTECHNOLOGY

Analog switching characteristics in TiW/Al2O3/Ta2O5/Ta RRAM devices

(2019) Wendong Song et al.   APPLIED PHYSICS LETTERS

Unipolar resistive switching behavior in Al2O3/HfO2 multilayer dielectric stacks: fabrication, characterization and simulation

(2019) M Maestro-Izquierdo et al.   NANOTECHNOLOGY

Design of CMOS Compatible, High-Speed, Highly-Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2 /Al2 O3 /TiO x (HAT) RRAM

(2018) Writam Banerjee et al.   Advanced Electronic Materials

Resistive switching in sub-micrometric ZnO polycrystalline films

(2018) D Conti et al.   NANOTECHNOLOGY

Bipolar Analog Memristors as Artificial Synapses for Neuromorphic Computing

(2018) Rui Wang et al.   Materials

Low-Power Forming Free TiO2–x/HfO2–y/TiO2–x-Trilayer RRAM Devices Exhibiting Synaptic Property Characteristics

(2017) Panagiotis Bousoulas et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Compliance-Free ZrO2/ZrO2 − x /ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour

(2017) Ruomeng Huang et al.   Nanoscale Research Letters

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

(2017) Wei Zhang et al.   Nanoscale Research Letters

Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation

(2017) Cong Ye et al.   RSC Advances

Reproducible and reliable resistive switching behaviors of AlOX/HfOX bilayer structures with Al electrode by atomic layer deposition

(2017) Masoud Akbari et al.   RSC Advances

Compliance-Free ZrO2/ZrO2 − x /ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour

(2017) Ruomeng Huang et al.   Nanoscale Research Letters

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

(2017) Wei Zhang et al.   Nanoscale Research Letters

A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure

(2016) Tsung-Ling Tsai et al.   APPLIED PHYSICS LETTERS

Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO2 RRAM Synapse for Neuromorphic Systems

(2016) Jiyong Woo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure

(2016) H. K. Li et al.   JOURNAL OF APPLIED PHYSICS

Stability, bistability and instability of amorphous ZrO2resistive memory devices

(2016) P Parreira et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

(2015) Umesh Chand et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

All ITO-based transparent resistive switching random access memory using oxygen doping method

(2015) Hee-Dong Kim et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Al 2 O 3 /HfO 2 functional stack films based resistive switching memories with controlled SET and RESET voltages

(2015) Lin Chen et al.   SOLID STATE IONICS

Effect of Nitrogen Doping on Variability of TaOx -RRAM for Low-Power 3-Bit MLC Applications

(2015) S. H. Misha et al.   ECS Solid State Letters

Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

(2015) Lai-Guo Wang et al.   Nanoscale Research Letters

Tunable Multilevel Storage of Complementary Resistive Switching on Single-Step Formation of ZnO/ZnWOx Bilayer Structure via Interfacial Engineering

(2014) Shih-Ming Lin et al.   ACS Applied Materials & Interfaces

Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

(2014) Chun-Yang Huang et al.   APPLIED PHYSICS LETTERS

Detection of oxygen ion drift in Pt/Al2O3/TiO2/Pt RRAM using interface-free single-layer graphene electrodes

(2014) Heeyoung Jeon et al.   CARBON

Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory

(2014)   IEEE ELECTRON DEVICE LETTERS

Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems

(2014) Yi Li et al.   Scientific Reports

A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

(2013) Shimeng Yu et al.   ADVANCED MATERIALS

Emulating the paired-pulse facilitation of a biological synapse with a NiOx-based memristor

(2013) S. G. Hu et al.   APPLIED PHYSICS LETTERS

The interface inter-diffusion induced enhancement of the charge-trapping capability in HfO2/Al2O3 multilayered memory devices

(2013) Xuexin Lan et al.   APPLIED PHYSICS LETTERS

Improved Resistive Switching Characteristics by Al2O3 Layers Inclusion in HfO2-Based RRAM Devices

(2013) C.-Y. Huang et al.   ECS Solid State Letters

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS