Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
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Title
Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
Authors
Keywords
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Journal
Nanoscale Research Letters
Volume 14, Issue 1, Pages -
Publisher
Springer Science and Business Media LLC
Online
2019-05-09
DOI
10.1186/s11671-019-2956-4
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