Improving linearity by introducing Al in HfO2 as memristor synapse device

Title
Improving linearity by introducing Al in HfO2 as memristor synapse device
Authors
Keywords
-
Journal
NANOTECHNOLOGY
Volume -, Issue -, Pages -
Publisher
IOP Publishing
Online
2019-07-25
DOI
10.1088/1361-6528/ab3480

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