A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure

Title
A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 15, Pages 153505
Publisher
AIP Publishing
Online
2016-04-13
DOI
10.1063/1.4946006

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