Analog switching characteristics in TiW/Al2O3/Ta2O5/Ta RRAM devices

In this letter, we report analog switching characteristics in an analog resistive random access memory device based on a TiW/Al2O3/Ta2O5/Ta stack. For this device, both oxides were grown by using an atomic layer deposition system and the oxygen vacancies were found to exist at the interface of these oxides by using angle-resolved X-ray Photoelectron Spectroscopy. The device exhibits analog switching behaviors. Multiple states were achieved by applying 128 consecutive identical pulses of mu s duration and stable for at least 10(4) s. These characteristics show that the TiW/Al2O3/Ta2O5/Ta device is a promising candidate for synaptic applications.