Low-Power Forming Free TiO2–x/HfO2–y/TiO2–x-Trilayer RRAM Devices Exhibiting Synaptic Property Characteristics

Authors

Keywords

Journal

Volume 64, Issue 8, Pages 3151-3158

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2017-06-08

DOI

10.1109/ted.2017.2709338

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