Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device

Effects of moisture and redox reactions in VCM and ECM resistive switching memories

(2018) Ilia Valov et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Visualization of nanocrystalline CuO in the grain boundaries of Cu2O thin films and effect on band bending and film resistivity

(2018) Jonas Deuermeier et al.   APL Materials

Embedded nanoparticle dynamics and their influence on switching behaviour of resistive memory devices

(2017) S. Tappertzhofen et al.   Nanoscale

UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors

(2016) Emanuel Carlos et al.   ACS Applied Materials & Interfaces

Highly conductive grain boundaries in copper oxide thin films

(2016) Jonas Deuermeier et al.   JOURNAL OF APPLIED PHYSICS

Influence of grain boundaries and interfaces on the electronic structure of polycrystalline CuO thin films

(2016) Jan Morasch et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Substrate reactivity as the origin of Fermi level pinning at the Cu2O/ALD-Al2O3interface

(2016) Jonas Deuermeier et al.   Materials Research Express

Conducting mechanisms of forming-free TiW/Cu2O/Cu memristive devices

(2015) P. Yan et al.   APPLIED PHYSICS LETTERS

Performance improvement of amorphous indium–gallium–zinc oxide ReRAM with SiO 2 inserting layer

(2015) Yanli Pei et al.   CURRENT APPLIED PHYSICS

Nanofilament Formation and Regeneration During Cu/Al2O3 Resistive Memory Switching

(2015) William A. Hubbard et al.   NANO LETTERS

Effects of N-Doped GeSbTe Buffer Layer on Switching Characteristics of Cu/Al2O3-Based CBRAM

(2015) S. Lim et al.   ECS Solid State Letters

Conductive-bridging random access memory: challenges and opportunity for 3D architecture

(2015) Debanjan Jana et al.   Nanoscale Research Letters

Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

(2014) Umberto Celano et al.   NANO LETTERS

Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

(2014) Yuchao Yang et al.   Nature Communications

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

(2014) Mario Lanza   Materials

High Temperature Thermal Conductivity of Amorphous Al2O3Thin Films Grown by Low Temperature ALD

(2013) Andrea Cappella et al.   ADVANCED ENGINEERING MATERIALS

Study of conduction and switching mechanisms in Al/AlOx/WOx/W resistive switching memory for multilevel applications

(2013) Ye Zhang et al.   APPLIED PHYSICS LETTERS

A Thermally Stable and High-Performance 90-nm ${\rm Al}_{2}{\rm O}_{3}\backslash{\rm Cu}$-Based 1T1R CBRAM Cell

(2013) Attilio Belmonte et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memories

(2013) Paulo R. F. Rocha et al.   JOURNAL OF APPLIED PHYSICS

CAFM investigations of filamentary conduction in Cu2O ReRAM devices fabricated using stencil lithography technique

(2012) Bharti Singh et al.   NANOTECHNOLOGY

Binary copper oxide semiconductors: From materials towards devices

(2012) B. K. Meyer et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

(2011) L. Goux et al.   APPLIED PHYSICS LETTERS

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

Multilevel resistive switching with ionic and metallic filaments

(2009) Ming Liu et al.   APPLIED PHYSICS LETTERS

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology

Chemical diffusion in non-stoichiometric cuprous oxide

(2007) Z. Grzesik et al.   JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS