Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer

Published 2020 View Full Article

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Title
Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer
Authors
Keywords
Multilevel resistive switching, ZrO, 2, thin film, Amorphous-ZTO layer, Schottky barrier effect, Improved endurance performance
Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 835, Issue -, Pages 155256
Publisher
Elsevier BV
Online
2020-04-23
DOI
10.1016/j.jallcom.2020.155256

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