Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity
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Title
Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity
Authors
Keywords
Atomic layer deposition, Low-temperature process, Flexible electronics, Synaptic plasticity
Journal
Nanoscale Research Letters
Volume 14, Issue 1, Pages -
Publisher
Springer Nature
Online
2019-03-16
DOI
10.1186/s11671-019-2933-y
References
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