Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

(2015) Lai-Guo Wang et al.   Nanoscale Research Letters

Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

(2014) Chun-Yang Huang et al.   APPLIED PHYSICS LETTERS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Photobias Instability of High Performance Solution Processed Amorphous Zinc Tin Oxide Transistors

(2013) Yoon Jang Kim et al.   ACS Applied Materials & Interfaces

Multi-level resistive switching observations in asymmetric Pt/Ta2O5−x/TiOxNy/TiN/Ta2O5−x/Pt multilayer configurations

(2013) Ah Rahm Lee et al.   APPLIED PHYSICS LETTERS

Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices

(2013) C. Chen et al.   JOURNAL OF APPLIED PHYSICS

High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays

(2012) Wootae Lee et al.   ACS Nano

Guided filament formation in NiO-resistive random access memory by embedding gold nanoparticles

(2012) Mutsunori Uenuma et al.   APPLIED PHYSICS LETTERS

Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

(2012) Yong-Hoon Kim et al.   NATURE

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films

(2012) Fu-Chien Chiu et al.   Nanoscale Research Letters

A physical model for bipolar oxide-based resistive switching memory based on ion-transport-recombination effect

(2011) Bin Gao et al.   APPLIED PHYSICS LETTERS

Approaches for improving the performance of filament-type resistive switching memory

(2011) WenTai Lian et al.   CHINESE SCIENCE BULLETIN

Controllable Filament With Electric Field Engineering for Resistive Switching Uniformity

(2011) Qing-Qing Sun et al.   IEEE ELECTRON DEVICE LETTERS

Low Reset Current in Stacked $\hbox{AlO}_{x}/ \hbox{WO}_{x}$ Resistive Switching Memory

(2011) Y. L. Song et al.   IEEE ELECTRON DEVICE LETTERS

Electrode dependence of filament formation in HfO2 resistive-switching memory

(2011) Kuan-Liang Lin et al.   JOURNAL OF APPLIED PHYSICS

Three-Dimensional Integration of Organic Resistive Memory Devices

(2010) Sunghoon Song et al.   ADVANCED MATERIALS

Roles of interfacial TiOxN1−x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks

(2010) June Sik Kwak et al.   APPLIED PHYSICS LETTERS

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

(2010) L. Goux et al.   APPLIED PHYSICS LETTERS

On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems

(2010) L. Goux et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Pulse-Programming Instabilities of Unipolar-Type NiOx

(2010) Deok-Kee Kim et al.   IEEE ELECTRON DEVICE LETTERS

Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions

(2010) Enrique A Miranda et al.   IEEE ELECTRON DEVICE LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals

(2009)   APPLIED PHYSICS LETTERS

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

(2009) Bin Gao et al.   IEEE ELECTRON DEVICE LETTERS

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode

(2008) Wan Shen et al.   APPLIED PHYSICS LETTERS

Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere

(2008) Doo Seok Jeong et al.   JOURNAL OF APPLIED PHYSICS