Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability
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Title
Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 11, Pages 113502
Publisher
AIP Publishing
Online
2014-03-18
DOI
10.1063/1.4868531
References
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- (2013) A. Alexewicz et al. SOLID-STATE ELECTRONICS
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- (2012) M. Ťapajna et al. APPLIED PHYSICS LETTERS
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- (2012) N. Ketteniss et al. IEEE ELECTRON DEVICE LETTERS
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- Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN–GaN metal oxide semiconductor high electron mobility transistors on Si substrates
- (2012) A. Alexewicz et al. THIN SOLID FILMS
- Electrical properties of atomic layer deposited aluminum oxide on gallium nitride
- (2011) Michele Esposto et al. APPLIED PHYSICS LETTERS
- Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions
- (2011) Satyaki Ganguly et al. APPLIED PHYSICS LETTERS
- Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate
- (2010) F. Medjdoub et al. IEEE ELECTRON DEVICE LETTERS
- High-Quality $\hbox{MgO}/\hbox{TiO}_{2}/\hbox{MgO}$ Nanolaminates on p-GaN MOS Capacitor
- (2010) Ko-Tao Lee et al. IEEE ELECTRON DEVICE LETTERS
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- (2010) M. S. Miao et al. JOURNAL OF APPLIED PHYSICS
- High electron mobility and low sheet resistance in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel heterostructure
- (2009) S. Zhang et al. APPLIED PHYSICS LETTERS
- Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation
- (2009) C. Ostermaier et al. IEEE ELECTRON DEVICE LETTERS
- Effects of Si Deposition on AlGaN Barrier Surfaces in GaN Heterostructure Field-Effect Transistors
- (2008) Norio Onojima et al. Applied Physics Express
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- (2008) R. Stoklas et al. APPLIED PHYSICS LETTERS
- Barrier-Layer Scaling of InAlN/GaN HEMTs
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- Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors
- (2008) Marcin Miczek et al. JOURNAL OF APPLIED PHYSICS
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