Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric

Published 2017 View Full Article

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Title
Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 8, Pages 1090-1093
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-06-28
DOI
10.1109/led.2017.2720719

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