Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4as Gate Dielectric and Passivation Layer

Authors

Keywords

Journal

Volume 63, Issue 2, Pages 731-738

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2016-01-02

DOI

10.1109/ted.2015.2510445

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