AlGaN/GaN MOS-HEMT Device Fabricated Using a High Quality PECVD Passivation Process

Published 2017 View Full Article

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Title
AlGaN/GaN MOS-HEMT Device Fabricated Using a High Quality PECVD Passivation Process
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 6, Pages 779-782
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-06-08
DOI
10.1109/led.2017.2696946

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