Comparative study of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide

Published 2011 View Full Article

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Title
Comparative study of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide
Authors
Keywords
-
Journal
SOLID-STATE ELECTRONICS
Volume 62, Issue 1, Pages 152-155
Publisher
Elsevier BV
Online
2011-05-21
DOI
10.1016/j.sse.2011.04.017

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