Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric

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Title
Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 62, Issue 2, Pages 512-518
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2014-12-19
DOI
10.1109/ted.2014.2377781

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