Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111)

Title
Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111)
Authors
Keywords
-
Journal
Applied Physics Express
Volume 2, Issue -, Pages 031001
Publisher
IOP Publishing
Online
2009-02-27
DOI
10.1143/apex.2.031001

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