Electronic surface and dielectric interface states on GaN and AlGaN

Role of barrier structure in current collapse of AlGaN/GaN high electron mobility transistors

(2012) Sandeepan DasGupta et al.   APPLIED PHYSICS LETTERS

Evidence of space charge limited flow in the gate current of AlGaN/GaN high electron mobility transistors

(2012) Weikai Xu et al.   APPLIED PHYSICS LETTERS

The band alignment of Cu2O/ZnO and Cu2O/GaN heterostructures

(2012) B. Kramm et al.   APPLIED PHYSICS LETTERS

Atomic layer deposition of Sc2O3 for passivating AlGaN/GaN high electron mobility transistor devices

(2012) Xinwei Wang et al.   APPLIED PHYSICS LETTERS

Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

(2012) A. Fontserè et al.   APPLIED PHYSICS LETTERS

On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress

(2012) M. Montes Bajo et al.   APPLIED PHYSICS LETTERS

Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors

(2012) Satyaki Ganguly et al.   APPLIED PHYSICS LETTERS

The combination self-cleaning effect of trimethylaluminium and tetrakis (dimethyl-amino) hafnium pretreatments on GaAs

(2012) Yan-Qiang Cao et al.   APPLIED SURFACE SCIENCE

Forward Current Transport Mechanism and Schottky Barrier Characteristics of a Ni/Au Contact on n-GaN

(2012) Da-Wei Yan et al.   CHINESE PHYSICS LETTERS

AlGaN/GaN MISHEMTs With High-$\kappa \ \hbox{LaLuO}_{3}$ Gate Dielectric

(2012) Shu Yang et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN/GaN HEMTs

(2012) Feng Gao et al.   IEEE ELECTRON DEVICE LETTERS

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

(2012) Chunhua Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Atomic Layer Deposition of $\hbox{SiO}_{2}$ for AlGaN/GaN MOS-HFETs

(2012) Casey J. Kirkpatrick et al.   IEEE ELECTRON DEVICE LETTERS

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

(2012) Sen Huang et al.   IEEE ELECTRON DEVICE LETTERS

Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

(2012) Wei Zhang et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN MOSHEMT With High-Quality $\hbox{Gate}$–$\hbox{SiO}_{2}$ Achieved by Room-Temperature Radio Frequency Magnetron Sputtering

(2012) Liang Pang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-Temperature Performance of AlGaN/GaN MOSHEMT With $\hbox{SiO}_{2}$ Gate Insulator Fabricated on Si (111) Substrate

(2012) Fatima Husna et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs

(2012) Michael J. Uren et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal–Insulator–Semiconductor Heterojunction Field-Effect Transistor

(2012) Hong-An Shih et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Illumination effects on electrical characteristics of GaN/AlGaN/GaN heterostructures and heterostructure field effect transistors and their elimination by proper surface passivation

(2012) M. Fagerlind et al.   JOURNAL OF APPLIED PHYSICS

Band offset measurements of the GaN/dielectric interfaces

(2012) Mary R. Coan et al.   JOURNAL OF APPLIED PHYSICS

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

(2012)   JOURNAL OF APPLIED PHYSICS

Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride

(2012) Jialing Yang et al.   JOURNAL OF APPLIED PHYSICS

The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs

(2012) Michele Esposto et al.   JOURNAL OF ELECTRONIC MATERIALS

Effects of H2O Pretreatment on the Capacitance–Voltage Characteristics of Atomic-Layer-Deposited Al2O3 on Ga-Face GaN Metal–Oxide–Semiconductor Capacitors

(2012) Xiang Liu et al.   JOURNAL OF ELECTRONIC MATERIALS

Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

(2012) D. Marcon et al.   MICROELECTRONICS RELIABILITY

Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test

(2012) B. Lambert et al.   MICROELECTRONICS RELIABILITY

Direct experimental determination of the spontaneous polarization of GaN

(2012) Jonas Lähnemann et al.   PHYSICAL REVIEW B

Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2gate dielectric

(2012) M Lachab et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Investigation of plasma-oxidized aluminium as a gate dielectric for AlGaN/GaN MISHFETs

(2012) Herwig Hahn et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

AlGaN/GaN heterostructure field-effect transistors with multi-MgxNy/GaN buffer and Photo-CVD SiO2 gate dielectric

(2012) K.H. Lee et al.   SOLID-STATE ELECTRONICS

Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs

(2012) Fanny Berthet et al.   SOLID-STATE ELECTRONICS

Investigation of temperature dependent threshold voltage variation of Gd2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure

(2012) Atanu Das et al.   AIP Advances

Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

(2012) Wei Wei et al.   Nanoscale Research Letters

Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors

(2011) Stephen W. Kaun et al.   Applied Physics Express

Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al$_{2}$O$_{3}$/AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistor on Si

(2011) Hong Zhou et al.   Applied Physics Express

Assessment of GaN Surface Pretreatment for Atomic Layer Deposited High-kDielectrics

(2011) Neeraj Nepal et al.   Applied Physics Express

Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

(2011) M. Ťapajna et al.   APPLIED PHYSICS LETTERS

Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

(2011) Z. H. Liu et al.   APPLIED PHYSICS LETTERS

Characterization of enhancement-mode AlGaN/GaN high electron mobility transistor using N2O plasma oxidation technology

(2011) Hsien-Chin Chiu et al.   APPLIED PHYSICS LETTERS

Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN

(2011) Jesse S. Jur et al.   APPLIED PHYSICS LETTERS

Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors

(2011) Feng Gao et al.   APPLIED PHYSICS LETTERS

Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

(2011) Michele Esposto et al.   APPLIED PHYSICS LETTERS

High temperature characteristics of AlGaN/GaN high electron mobility transistors

(2011) Li-Yuan Yang et al.   Chinese Physics B

High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator

(2011) Kelson D. Chabak et al.   IEEE ELECTRON DEVICE LETTERS

Low-Leakage-Current AlN/GaN MOSHFETs Using $ \hbox{Al}_{2}\hbox{O}_{3}$ for Increased 2DEG

(2011) Tongde Huang et al.   IEEE ELECTRON DEVICE LETTERS

Effects of Barrier Thinning on Small-Signal and 30-GHz Power Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors

(2011) Masataka Higashiwaki et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Band Alignment and Performance Improvement Mechanisms of Chlorine-Treated ZnO-Gate AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors

(2011) Ya-Lan Chiou et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Transport Studies of AlGaN/GaN Heterostructures of Different Al Mole Fractions With Variable $\hbox{SiN}_{x}$ Passivation Stress

(2011) Tamara B. Fehlberg et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped $\hbox{TiO}_{2}$ as a Gate Dielectric

(2011) Chih-Chun Hu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

(2011) Joseph J. Freedsman et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress

(2011) Masafumi Tajima et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Effect of Moisture on the Frequency-Dependent Current of an AlGaN/GaN High-Electron-Mobility Transistor

(2011) Jeong Jin Kim et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Spontaneous polarization and band gap bowing in YxAlyGa1-x-yN alloys lattice-matched to GaN

(2011) Kazuhiro Shimada et al.   JOURNAL OF APPLIED PHYSICS

Chemical Etch Characteristics of N-Face and Ga-Face GaN by Phosphoric Acid and Potassium Hydroxide Solutions

(2011) Younghun Jung et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Cleaning of GaN(2¯110) surfaces

(2011) Ch. Schulz et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Charge trapping and interface characteristics in normally-off Al2O3/GaN-MOSFETs

(2011) Ki-Won Kim et al.   MICROELECTRONIC ENGINEERING

Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics

(2011) Y.C. Chang et al.   MICROELECTRONIC ENGINEERING

Reliability issues of GaN based high voltage power devices

(2011) J. Wuerfl et al.   MICROELECTRONICS RELIABILITY

The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability

(2011) Milan Ťapajna et al.   MICROELECTRONICS RELIABILITY

Study of the breakdown failure mechanisms for power AlGaN/GaN HEMTs implemented using a RF compatible process

(2011) Gang Xie et al.   MICROELECTRONICS RELIABILITY

InGaAs Metal Oxide Semiconductor Devices with Ga2O3(Gd2O3) High-κ Dielectrics for Science and Technology beyond Si CMOS

(2011) M. Hong et al.   MRS BULLETIN

In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O3-oxidized GaN substrates

(2011) Prasanna Sivasubramani et al.   Physica Status Solidi-Rapid Research Letters

The passivation mechanism of nitrogen ions on the gate leakage current of HfO2/AlGaN/GaN MOS-HEMTs

(2011) ZhiWei Bi et al.   Science China-Physics Mechanics & Astronomy

Comparative study of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide

(2011) Eiji Miyazaki et al.   SOLID-STATE ELECTRONICS

Valence band offset at GaN/β-Si3N4 and β-Si3N4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy

(2011) Mahesh Kumar et al.   THIN SOLID FILMS

Laser ablated ZnO layers for ALGaN/GaN HEMT passivation

(2011) G. Vanko et al.   VACUUM

Structure and chemistry of the (111)Sc2O3/(0001) GaN epitaxial interface

(2010) X. Weng et al.   APPLIED PHYSICS LETTERS

On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors

(2010) Dawei Yan et al.   APPLIED PHYSICS LETTERS

Electron energy band alignment at the (100)Si/MgO interface

(2010) V. V. Afanas’ev et al.   APPLIED PHYSICS LETTERS

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

(2010) Prashanth Makaram et al.   APPLIED PHYSICS LETTERS

AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with ZnO gate layer and (NH4)2Sx surface treatment

(2010) Ya-Lan Chiou et al.   APPLIED PHYSICS LETTERS

AlGaN/GaN MOS-HEMTs With Gate ZnO Dielectric Layer

(2010) Ching-Ting Lee et al.   IEEE ELECTRON DEVICE LETTERS

Analytical Modeling of Current Collapse in AlGaN/GaN HFETs According to the Virtual Gate Concept

(2010) Maziar Moradi et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

(2010) Jungwoo Joh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effects of Nitride-Based Plasma Pretreatment Prior to SiNxPassivation in AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrates

(2010) Ji Ha Kim et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy

(2010) Xiaoqing Xu et al.   JOURNAL OF APPLIED PHYSICS

Modeling of the reverse gate leakage in AlGaN/GaN high electron mobility transistors

(2010) S. Sudharsanan et al.   JOURNAL OF APPLIED PHYSICS

Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy

(2010) Martina Baeumler et al.   JOURNAL OF ELECTRONIC MATERIALS

Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

(2010) M F Romero et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Low Hysteresis Dispersion La[sub 2]O[sub 3] AlGaN∕GaN MOS-HEMTs

(2010) Hsien-Chin Chiu et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Post-process thermal treatment for microwave power improvement of AlGaN/GaN HEMTs

(2010) M.Z. Peng et al.   MICROELECTRONIC ENGINEERING

Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO2 as a gate dielectric

(2010) Y.C. Chang et al.   MICROELECTRONIC ENGINEERING

Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations

(2010) M. Faqir et al.   MICROELECTRONICS RELIABILITY

AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress

(2010) E.A. Douglas et al.   MICROELECTRONICS RELIABILITY

High-k praseodymium oxide passivated AlGaN/GaN MOSFETs using P2S5/(NH4)2SX+UV interface treatment

(2010) Chao-Wei Lin et al.   MICROELECTRONICS RELIABILITY

Analysis of polar GaN surfaces with photoelectron and high resolution electron energy loss spectroscopy

(2010) Pierre Lorenz et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Tuning two-dimensional electron gas of ferroelectric/GaN heterostructures by ferroelectric polarization

(2010) Jihua Zhang et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Normally off operation GaN-based MOSFETs for power electronics applications

(2010) Yuki Niiyama et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Chemical etchant dependence of surface structure and morphology on GaN(0001) substrates

(2010) Azusa N. Hattori et al.   SURFACE SCIENCE

Band alignments and improved leakage properties of (La2O3)0.5(SiO2)0.5/SiO2/GaN stacks for high-temperature metal-oxide-semiconductor field-effect transistor applications

(2009) L. G. Gao et al.   APPLIED PHYSICS LETTERS

Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors

(2009) Yong-Hua Li et al.   APPLIED PHYSICS LETTERS

Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy

(2009) A. L. Yang et al.   APPLIED PHYSICS LETTERS

A thermodynamic model and estimation of the experimental value of spontaneous polarization in a wurtzite GaN

(2009) W. S. Yan et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition: An Overview

(2009) Steven M. George   CHEMICAL REVIEWS

AlGaN/GaN HEMTs With Low Leakage Current and High On/Off Current Ratio

(2009) Yu-Syuan Lin et al.   IEEE ELECTRON DEVICE LETTERS

Investigations of GaN metal-oxide-semiconductor capacitors with sputtered HfO2 gate dielectrics

(2009) C.F. Shih et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures

(2009) Engin Arslan et al.   JOURNAL OF APPLIED PHYSICS

GaN HEMT reliability

(2009) J.A. del Alamo et al.   MICROELECTRONICS RELIABILITY

Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

(2008) Y. C. Chang et al.   APPLIED PHYSICS LETTERS

Spectroscopic analysis of the epitaxial CaO (111)–GaN (0002) interface

(2008) H. S. Craft et al.   APPLIED PHYSICS LETTERS

Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

(2008) T. D. Veal et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

(2008) Yuanzheng Yue et al.   IEEE ELECTRON DEVICE LETTERS

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

(2008) Gaudenzio Meneghesso et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Analytical HFET $I$– $V$ Model in Presence of Current Collapse

(2008) Alexei Koudymov et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Elasticity, band-gap bowing, and polarization of AlxGa1−xN alloys

(2008) Yifeng Duan et al.   JOURNAL OF APPLIED PHYSICS

High κ dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties

(2008) W.H. Chang et al.   JOURNAL OF CRYSTAL GROWTH

Properties of isotype n-ZnO/n-GaN heterostructures studied by I–V–T and electron beam induced current methods

(2008) Ya I Alivov et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Effects of oxygen on low-temperature growth and band alignment of ZnO∕GaN heterostructures

(2008) H. F. Liu et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Effectiveness of in situ NH3 annealing treatments for the removal of oxygen from GaN surfaces

(2008) L.C. Grabow et al.   SURFACE SCIENCE