Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Published 2017 View Full Article

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Title
Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 3, Pages 832-839
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-01-05
DOI
10.1109/ted.2016.2638855

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