High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors

Published 2016 View Full Article

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Title
High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors
Authors
Keywords
AlGaN/GaN, PECVD, Silicon dioxide, Normally-off, Recessed-gate
Journal
SOLID-STATE ELECTRONICS
Volume 122, Issue -, Pages 32-36
Publisher
Elsevier BV
Online
2016-05-14
DOI
10.1016/j.sse.2016.04.016

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