High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulator Grown by ALD

Published 2009 View Full Article

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Title
High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulator Grown by ALD
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 2, Pages 96-98
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2009-12-17
DOI
10.1109/led.2009.2036135
References
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