Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces

Frequency dispersion in III-V metal-oxide-semiconductor capacitors

(2012) Susanne Stemmer et al.   APPLIED PHYSICS LETTERS

Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures

(2012) Junwoo Son et al.   APPLIED PHYSICS LETTERS

Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

(2012) Rathnait D. Long et al.   Materials

Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

(2011) Z. H. Liu et al.   APPLIED PHYSICS LETTERS

Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors

(2011) Ting-Hsiang Hung et al.   APPLIED PHYSICS LETTERS

Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

(2011) Michele Esposto et al.   APPLIED PHYSICS LETTERS

Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

(2011) Satyaki Ganguly et al.   APPLIED PHYSICS LETTERS

Correlation Between AlGaN/GaN MISHFET Performance and $ \hbox{HfO}_{2}$ Insulation Layer Quality

(2011) Junxia Shi et al.   IEEE ELECTRON DEVICE LETTERS

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

(2011) Rongming Chu et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

(2010) M. Kanamura et al.   IEEE ELECTRON DEVICE LETTERS

High performance AlGaN/GaN power switch with HfO2 insulation

(2009) Junxia Shi et al.   APPLIED PHYSICS LETTERS

Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

(2009) Z. H. Liu et al.   APPLIED PHYSICS LETTERS

Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

(2009) O.I. Saadat et al.   IEEE ELECTRON DEVICE LETTERS

Experimental Demonstration of Novel High-Voltage Epilayer RESURF GaN MOSFET

(2009) Weixiao Huang et al.   IEEE ELECTRON DEVICE LETTERS

Demonstration of Low-Leakage-Current Low-On-Resistance 600-V 5.5-A GaN/AlGaN HEMT

(2009) Xiaobin Xin et al.   IEEE ELECTRON DEVICE LETTERS

The reduction of gate leakage of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors by N2plasma pretreatment

(2009) Qian Feng et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness

(2008) P. Kordoš et al.   SOLID-STATE ELECTRONICS