600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

Published 2013 View Full Article

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Title
600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 11, Pages 1373-1375
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2013-09-18
DOI
10.1109/led.2013.2279846

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